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Register a new userLow B Field Magneto-Phonon Resonances in Single-Layer and Bilayer Graphene
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Many-body effects resulting from strong electron-electron and electron-phonon interactions play a significant role in graphene physics. We report on their manifestation in low B field magneto-phonon resonances in high quality exfoliated single-layer and bilayer graphene encapsulated in hexagonal boron nitride. These resonances allow us to extract characteristic effective Fermi velocities, as high as $1.20 times 10^6$ m/s, for the observed dressed Landau level transitions, as well as the broadening of the resonances, which increases with Landau level index.
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We report the first temperature dependent phonon transport measurements in suspended Cu-CVD single layer graphene (SLG) from 15K to 380K using microfabricated suspended devices. The thermal conductance per unit cross section $sigma$/A increases with temperature and exhibits a peak near T~280K ($pm$10K) due to the Umklapp process. At low temperatures (T<140K), the temperature dependent thermal conductivity scales as ~T^{1.5}, suggesting that the main contribution to thermal conductance arises from flexural acoustic (ZA) phonons in suspended SLG. The $sigma$/A reaches a high value of 1.7$times10^5 T^{1.5}$ W/m^2K, which is approaching the expected ballistic phonon thermal conductance for two-dimensional graphene sheets. Our results not only clarify the ambiguity in the thermal conductance, but also demonstrate the potential of Cu-CVD graphene for heat related applications.
We make use of micro-magneto Raman scattering spectroscopy to probe magneto-phonon resonances (MPR) in suspended mono- to penta-layer graphene. MPR correspond to avoided crossings between zone-center optical phonons (G-mode) and optically-active inter Landau level (LL) transitions and provide a tool to perform LL spectroscopy at a fixed energy ($approx 197~rm{meV}$) set by the G-mode phonon. Using a single-particle effective bilayer model, we readily extract the velocity parameter associated with each MPR. A single velocity parameter slightly above the bulk graphite value suffices to fit all MPR for $Ngeq2$ layer systems. In contrast, in monolayer graphene, we find that the velocity parameter increases significantly from $(1.23pm 0.01) times 10^6~mathrm{m.s^{-1}}$ up to $(1.45pm0.02) times 10^6~mathrm{m.s^{-1}}$ as the first to third optically-active inter LL transition couple to the G-mode phonon. This result is understood as a signature of enhanced many-body effects in unscreened graphene.
The low-frequency magneto-optical absorption spectra of bilayer Bernal graphene are studied within the tight-binding model and gradient approximation. The interlayer interactions strongly affect the electronic properties of the Landau levels (LLs), and thus enrich the optical absorption spectra. According to the characteristics of the wave functions, the low-energy LLs can be divided into two groups. This division results in four kinds of optical absorption peaks with complex optical selection rules. Observing the experimental convergent absorption frequencies close to zero magnetic field might be useful and reliable in determining the values of several hopping integrals. The dependence of the optical absorption spectra on the field strength is investigated in detail, and the results differ considerably from those of monolayer graphene.
The magneto-phonon resonance or MPR occurs in semiconductor materials when the energy spacing between Landau levels is continuously tuned to cross the energy of an optical phonon mode. MPRs have been largely explored in bulk semiconductors, in two-dimensional systems and in quantum dots. Recently there has been significant interest in the MPR interactions of the Dirac fermion magnetoexcitons in graphene, and a rich splitting and anti-crossing phenomena of the even parity E2g long wavelength optical phonon mode have been theoretically proposed and experimentally observed. The MPR has been found to crucially depend on disorder in the graphene layer. This is a feature that creates new venues for the study of interplays between disorder and interactions in the atomic layers. We review here the fundamentals of MRP in graphene and the experimental Raman scattering works that have led to the observation of these phenomena in graphene and graphite.
Phonon self-energy corrections have mostly been studied theoretically and experimentally for phonon modes with zone-center (q = 0) wave-vectors. Here, gate-modulated Raman scattering is used to study phonons of a single layer of graphene (1LG) in the frequency range from 2350 to 2750 cm-1, which shows the G* and the G-band features originating from a double-resonant Raman process with q ot= 0. The observed phonon renormalization effects are different from what is observed for the zone-center q = 0 case. To explain our experimental findings, we explored the phonon self-energy for the phonons with non-zero wave-vectors (q ot= 0) in 1LG in which the frequencies and decay widths are expected to behave oppositely to the behavior observed in the corresponding zone-center q = 0 processes. Within this framework, we resolve the identification of the phonon modes contributing to the G* Raman feature at 2450 cm-1 to include the iTO+LA combination modes with q ot= 0 and the 2iTO overtone modes with q = 0, showing both to be associated with wave-vectors near the high symmetry point K in the Brillouin zone.
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