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The effect of the displacement damage on the Charge Collection Efficiency in Silicon Drift Detectors for the LOFT satellite

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 Added by Ettore Del Monte
 Publication date 2015
  fields Physics
and research's language is English




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The technology of Silicon Drift Detectors (SDDs) has been selected for the two instruments aboard the Large Observatory For X-ray Timing (LOFT) space mission. LOFT underwent a three year long assessment phase as candidate for the M3 launch opportunity within the Cosmic Vision 2015 -- 2025 long-term science plan of the European Space Agency. During the LOFT assessment phase, we studied the displacement damage produced in the SDDs by the protons trapped in the Earths magnetosphere. In a previous paper we discussed the effects of the Non Ionising Energy Losses from protons on the SDD leakage current. In this paper we report the measurement of the variation of Charge Collection Efficiency produced by displacement damage caused by protons and the comparison with the expected damage in orbit.



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A detailed study of charge collection efficiency has been performed on the Silicon Drift Detectors (SDD) of the ALICE experiment. Three different methods to study the collected charge as a function of the drift time have been implemented. The first approach consists in measuring the charge at different injection distances moving an infrared laser by means of micrometric step motors. The second method is based on the measurement of the charge injected by the laser at fixed drift distance and varying the drift field, thus changing the drift time. In the last method, the measurement of the charge deposited by atmospheric muons is used to study the charge collection efficiency as a function of the drift time. The three methods gave consistent results and indicated that no charge loss during the drift is observed for the sensor types used in 99% of the SDD modules mounted on the ALICE Inner Tracking System. The atmospheric muons have also been used to test the effect of the zero-suppression applied to reduce the data size by erasing the counts in cells not passing the thresholds for noise removal. As expected, the zero suppression introduces a dependence of the reconstructed charge as a function of drift time because it cuts the signal in the tails of the electron clouds enlarged by diffusion effects. These measurements allowed also to validate the correction for this effect extracted from detailed Monte Carlo simulations of the detector response and applied in the offline data reconstruction.
401 - E. Del Monte 2014
During the three years long assessment phase of the LOFT mission, candidate to the M3 launch opportunity of the ESA Cosmic Vision programme, we estimated and measured the radiation damage of the silicon drift detectors (SDDs) of the satellite instrumentation. In particular, we irradiated the detectors with protons (of 0.8 and 11 MeV energy) to study the increment of leakage current and the variation of the charge collection efficiency produced by the displacement damage, and we bombarded the detectors with hypervelocity dust grains to measure the effect of the debris impacts. In this paper we describe the measurements and discuss the results in the context of the LOFT mission.
The Ion Beam Induced Charge Collection (IBIC) technique was used to map the charge collection efficiency (CCE) of a 4H-SiC photodetector with coplanar interdigitated Schottky barrier electrodes and a common ohmic contact on the back side. IBIC maps were obtained using focused proton beams with energies of 0.9 MeV and 1.5 MeV, at different bias voltages and different sensitive electrode configurations (charge collection at the top Schottky or at the back Ohmic contact). These different experimental conditions have been modeled using a two dimensional finite element code to solve the adjoint carrier continuity equations and the results obtained have been compared with experimental results. The excellent consistency between the simulated and experimental CCE maps allows an exhaustive interpretation of the charge collection mechanisms occurring in pixellated or strip detectors.
The silicon drift detectors are at the basis of the instrumentation aboard the Large Observatory For x-ray Timing (LOFT) satellite mission, which underwent a three year assessment phase within the Cosmic Vision 2015 - 2025 long-term science plan of the European Space Agency. Silicon detectors are especially sensitive to the displacement damage, produced by the non ionising energy losses of charged and neutral particles, leading to an increase of the device leakage current and thus worsening the spectral resolution. During the LOFT assessment phase, we irradiated two silicon drift detectors with a proton beam at the Proton Irradiation Facility in the accelerator of the Paul Scherrer Institute and we measured the increase in leakage current. In this paper we report the results of the irradiation and we discuss the impact of the radiation damage on the LOFT scientific performance.
The replacement of the existing endcap calorimeter in the Compact Muon Solenoid (CMS) detector for the high-luminosity LHC (HL-LHC), scheduled for 2027, will be a high granularity calorimeter. It will provide detailed position, energy, and timing information on electromagnetic and hadronic showers in the immense pileup of the HL-LHC. The High Granularity Calorimeter (HGCAL) will use 120-, 200-, and 300-$mutextrm{m}$ thick silicon (Si) pad sensors as the main active material and will sustain 1-MeV neutron equivalent fluences up to about $10^{16}~textrm{n}_textrm{eq}textrm{cm}^{-2}$. In order to address the performance degradation of the Si detectors caused by the intense radiation environment, irradiation campaigns of test diode samples from 8-inch and 6-inch wafers were performed in two reactors. Characterization of the electrical and charge collection properties after irradiation involved both bulk polarities for the three sensor thicknesses. Since the Si sensors will be operated at -30 $^circ$C to reduce increasing bulk leakage current with fluence, the charge collection investigation of 30 irradiated samples was carried out with the infrared-TCT setup at -30 $^circ$C. TCAD simulation results at the lower fluences are in close agreement with the experimental results and provide predictions of sensor performance for the lower fluence regions not covered by the experimental study. All investigated sensors display 60$%$ or higher charge collection efficiency at their respective highest lifetime fluences when operated at 800 V, and display above 90$%$ at the lowest fluence, at 600 V. The collected charge close to the fluence of $10^{16}~textrm{n}_textrm{eq}textrm{cm}^{-2}$ exceeds 1 fC at voltages beyond 800 V.
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