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Register a new userEffects of Lorentz Symmetry Violation in the Spectra of Rare-Earth Ions in a Crystal Field
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We demonstrate that experiments measuring the transition energies of rare-earth ions doped in crystalline lattices are sensitive to violations of Local Lorentz Invariance and Einsteins Equivalence Principle. Using the crystal field of LaCl$_{3}$ as an example, we calculate the frame-dependent energy shifts of the transition frequencies between low-lying states of Ce$^{3+}$, Nd$^{3+}$, and Er$^{3+}$ dopants in the context of the Standard Model Extension, and show that they have high sensitivity to electron anomalies that break rotational invariance.
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Lorentz symmetry is one of the cornerstones of modern physics. However, a number of theories aiming at unifying gravity with the other fundamental interactions including string field theory suggest violation of Lorentz symmetry [1-4]. While the energy scale of such strongly Lorentz symmetry-violating physics is much higher than that currently attainable by particle accelerators, Lorentz violation may nevertheless be detectable via precision measurements at low energies [2]. Here, we carry out a systematic theoretical investigation of the sensitivity of a wide range of atomic systems to violation of local Lorentz invariance (LLI). Aim of these studies is to identify which atom shows the biggest promise to detect violation of Lorentz symmetry. We identify the Yb+ ion as an ideal system with high sensitivity as well as excellent experimental controllability. By applying quantum information inspired technology to Yb+, we expect tests of LLI violating physics in the electron-photon sector to reach levels of $10^{-23}$, five orders of magnitude more sensitive than the current best bounds [5-7]. Most importantly, the projected sensitivity of $10^{-23}$ for the Yb+ ion tests will allow for the first time to probe whether Lorentz violation is minimally suppressed at low energies for photons and electrons.
We describe a method for creating small quantum processors in a crystal stoichiometric in an optically active rare earth ion. The crystal is doped with another rare earth, creating an ensemble of identical clusters of surrounding ions, whose optical and hyperfine frequencies are uniquely determined by their spatial position in the cluster. Ensembles of ions in each unique position around the dopant serve as qubits, with strong local interactions between ions in different qubits. These ensemble qubits can each be used as a quantum memory for light, and we show how the interactions between qubits can be used to perform linear operations on the stored photonic state. We also describe how these ensemble qubits can be used to enact, and study, error correction.
In this paper, we evaluate the Casimir energy and pressure for a massive fermionic field confined in the region between two parallel plates. In order to implement this confinement we impose the standard MIT bag boundary on the plates for the fermionic field. In this paper we consider a quantum field theory model with a CPT even, aether-like Lorentz symmetry violation. It turns out that the fermionic Casimir energy and pressure depend on the direction of the constant vector that implements the Lorentz symmetry breaking.
Based on models of confinement of quarks, we analyse a relativistic scalar particle subject to a scalar potential proportional to the inverse of the radial distance and under the effects of the violation of the Lorentz symmetry. We show that the effects of the Lorentz symmetry breaking can induced a harmonic-type potential. Then, we solve the Klein-Gordon equation analytically and discuss the influence of the background of the violation of the Lorentz symmetry on the relativistic energy levels.
Continued dimensional scaling of semiconductor devices has driven information technology into vastly diverse applications. As the size of devices approaches fundamental limits, metrology techniques with nanometre resolution and three-dimensional (3D) capabilities are desired for device optimisation. For example, the performance of an ultra-scaled transistor can be strongly influenced by the local electric field and strain. Here we study the spectral response of single erbium ions to applied electric field and strain in a silicon ultra-scaled transistor. Stark shifts induced by both the overall electric field and the local charge environment are observed. Further, changes in strain smaller than $3times 10^{-6}$ are detected, which is around two orders of magnitude more sensitive than the standard techniques used in the semiconductor industry. These results open new possibilities for non-destructive 3D mapping of the local strain and electric field in the channel of ultra-scaled transistors, using the single erbium ions as ultra-sensitive atomic probes.
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