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Register a new userCharge Induced Fluctuation Forces in Graphitic Nanostructures
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Charge fluctuations in nano-circuits with capacitor components are shown to give rise to a novel type of long-ranged interaction, which co-exist with the regular Casimir/van der Waals force. The developed theory distinguishes between thermal and quantum mechanical effects, and it is applied to capacitors involving graphene nanostructures. The charge fluctuations mechanism is captured via the capacitance of the system with geometrical and quantum mechanical components. The dependence on the distance separation, temperature, size, and response properties of the system shows that this type of force can have a comparable and even dominant effect to the Casimir interaction. Our results strongly indicate that fluctuations induced interactions due to various thermodynamic quantities can have important thermal and quantum mechanical contributions at the micro- and nanoscale.
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We study the stochastic dynamics of an electrolyte driven by a uniform external electric field and show that it exhibits generic scale invariance despite the presence of Debye screening. The resulting long-range correlations give rise to a Casimir-like fluctuation-induced force between neutral boundaries that confine the ions; this force is controlled by the external electric field, and it can be both attractive and repulsive with similar boundary conditions, unlike other long-range fluctuation-induced forces. This work highlights the importance of nonequilibrium correlations in electrolytes and shows how they can be used to tune interactions between uncharged biological or synthetic structures at large separations.
We discuss fluctuation-induced forces in a system described by a continuous Landau-Ginzburg model with a quenched disorder field, defined in a $d$-dimensional slab geometry $mathbb R^{d-1}times[0,L]$. A series representation for the quenched free energy in terms of the moments of the partition function is presented. In each moment an order parameter-like quantity can be defined, with a particular correlation length of the fluctuations. For some specific strength of the non-thermal control parameter, it appears a moment of the partition function where the fluctuations associated to the order parameter-like quantity becomes long-ranged. In this situation, these fluctuations become sensitive to the boundaries. In the Gaussian approximation, using the spectral zeta-function method, we evaluate a functional determinant for each moment of the partition function. The analytic structure of each spectral zeta-function depending on the dimension of the space for the case of Dirichlet, Neumann Laplacian and also periodic boundary conditions is discussed in a unified way. Considering the moment of the partition function with the largest correlation length of the fluctuations, we evaluate the induced force between the boundaries, for Dirichlet boundary conditions. We prove that the sign of the fluctuation-induced force for this case depend in a non-trivial way on the strength of the non-thermal control parameter.
Long-range thermal fluctuations appear in fluids in nonequilibrium states leading to fluctuation-induced Casimir-like forces. Two distinct mechanisms have been identified for the origin of the long-range nonequilibrium fluctuations in fluids subjected to a temperature or concentration gradient. One is a coupling between the heat or mass-diffusion mode with a viscous mode in fluids subjected to a temperature or concentration gradient. Another one is the spatial inhomogeneity of thermal noise in the presence of a gradient. We show that in fluids fluctuation-induced forces arising from mode coupling are several orders of magnitude larger than those from inhomogeneous noise.
Bilayers of graphitic materials have potential applications in field effect transistors (FETs). A potential difference applied between certain ionic bilayers made from insulating graphitic materials such as BN, ZnO and AlN could reduce gap sizes, turning them into useful semiconductors. On the other hand, opening of a small semiconducting gap occurs in graphene bilayers under applied field. The aim here is to investigate to what extent substrate induced electron-phonon interactions (EPIs) modify this gap change. We examine EPIs in several lattice configurations, using a perturbative approach. The typical effect of EPIs on the ionic bilayers is an undesirable gap widening. The size of this gap change varies considerably with lattice structure and the magnitude of the bias. When bias is larger than the non-interacting gap size, EPIs have the smallest effect on the bandgap, especially in configurations with $AA^{prime}$ and $AB$ structures. Thus careful selection of substrate, lattice configuration and bias strength to minimise the effects of EPIs could be important for optimising the properties of electronic devices. We use parameters related to BN in this article. In practice, the results presented here are broadly applicable to other graphitic bilayers, and are likely to be qualitatively similar in metal dichalcogenide bilayers such as MoS$_2$, which are already of high interest for their use in FETs.
The Casimir interaction between two objects, or between an object and a plane, depends on their relative orientations. We make these angular dependences explicit by considering prolate or oblate spheroids. The variation with orientation is calculated exactly at asymptotically large distances for the electromagnetic field, and at arbitrary separations for a scalar field. For a spheroid in front of a mirror, the leading term is orientation independent, and we find the optimal orientation from computations at higher order.
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