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Register a new userSpin transport and spin conversion in compound semiconductor with non-negligible spin-orbit interaction
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Authors
Akiyori Yamamoto
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A quantitative investigation of spin-pumping-induced spin-transport in n-GaAs was conducted at room temperature (RT). GaAs has a non-negligible spin orbit interaction, so that electromotive force due to the inverse spin Hall effect (ISHE) of GaAs contributed to the electromotive force detected with a platinum (Pt) spin detector. The electromotive force detected by the Pt spin detector had opposite polarity to that measured with a Ni80Fe20/GaAs bilayer due to the opposite direction of spin current flow, which demonstrates successful spin transport in the n-GaAs channel. A two-dimensional spin-diffusion model that considers the ISHE in the n-GaAs channel reveals an accurate spin diffusion length of t_s = 1.09 um in n-GaAs (NSi = 4x10^16 cm-3) at RT, which is approximately half that estimated by the conventional model.
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Symmetry formulated by group theory plays an essential role with respect to the laws of nature, from fundamental particles to condensed matter systems. Here, by combining symmetry analysis and tight-binding model calculations, we elucidate that the crystallographic symmetries of a vast number of magnetic materials with light elements, in which the neglect of relativistic spin-orbit coupling (SOC) is an appropriate approximation, are considerably larger than the conventional magnetic groups. Thus, a symmetry description that involves partially-decoupled spin and spatial rotations, dubbed as spin group, is required. Spin group permits more symmetry operations and thus more energy degeneracies that are disallowed by the magnetic groups. One consequence of the spin group is the new anti-unitary symmetries that protect SOC-free Z_2 topological phases with unprecedented surface node structures. Our work not only manifests the physical reality of materials with weak SOC, but also shed light on the understanding of all solids with and without SOC by a unified group theory.
We show theoretically that conversion between spin and charge by spin-orbit interaction in metals occurs even in a non-local setup where magnetization and spin-orbit interaction are spatially separated if electron diffusion is taken into account. Calculation is carried out for the Rashba spin-orbit interaction treating the coupling with a ferromagnet perturbatively. The results indicate the validity of the concept of effective spin gauge field (spin motive force) in the non-local configuration. The inverse Rashba-Edelstein effect observed for a trilayer of a ferromagnet, a normal metal and a heavy metal can be explained in terms of the non-local effective spin gauge field.
In this article we extend the currently established diffusion theory of spin-dependent electrical conduction by including spin-dependent thermoelectricity and thermal transport. Using this theory, we propose new experiments aimed at demonstrating novel effects such as the spin-Peltier effect, the reciprocal of the recently demonstrated thermally driven spin injection, as well as the magnetic heat valve. We use finite-element methods to model specific devices in literature to demonstrate our theory. Spin-orbit effects such as anomalous-Hall, -Nernst, anisotropic magnetoresistance and spin-Hall are also included in this model.
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We propose a spin transistor using only non-magnetic materials that exploits the characteristics of bulk inversion asymmetry (BIA) in (110) symmetric quantum wells. We show that extremely large spin splittings due to BIA are possible in (110) InAs/GaSb/AlSb heterostructures, which together with the enhanced spin decay times in (110) quantum wells demonstrates the potential for exploitation of BIA effects in semiconductor spintronics devices. Spin injection and detection is achieved using spin-dependent resonant interband tunneling and spin transistor action is realized through control of the electron spin lifetime in an InAs lateral transport channel using an applied electric field (Rashba effect). This device may also be used as a spin valve, or a magnetic field sensor. The electronic structure and spin relaxation times for the spin transistor proposed here are calculated using a nonperturbative 14-band k.p nanostructure model.
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