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Register a new userFinite frequency noise for Laughlin state investigated by a resonant circuit
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We study the finite frequency (F.F.) noise properties of edge states in the Laughlin state. We investigate the model of a resonant detector coupled to a quantum point contact in the weak-backscattering limit. In particular we discuss the impact of possible renormalization of the Luttinger exponent, due to environmental effects, on the measured quantities and we propose a simple way to extract such non-universal parameters from noise measurements.
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Photo-assisted transport through a mesoscopic conductor occurs when an oscillatory (AC) voltage is superposed to the constant (DC) bias which is imposed on this conductor. Of particular interest is the photo assisted shot noise, which has been investigated theoretically and experimentally for several types of samples. For DC biased conductors, a detection scheme for finite frequency noise using a dissipative resonant circuit, which is inductively coupled to the mesoscopic device, was developped recently. We argue that the detection of the finite frequency photo-assisted shot noise can be achieved with the same setup, despite the fact that time translational invariance is absent here. We show that a measure of the photo-assisted shot noise can be obtained through the charge correlator associated with the resonant circuit, where the latter is averaged over the AC drive frequency. We test our predictions for a point contact placed in the fractional quantum Hall effect regime, for the case of weak backscattering. The Keldysh elements of the photo-assisted noise correlator are computed. For simple Laughlin fractions, the measured photo-assisted shot noise displays peaks at the frequency corresponding to the DC bias voltage, as well as satellite peaks separated by the AC drive frequency.
Magnetic impurities with sufficient anisotropy could account for the observed strong deviation of the edge conductance of 2D topological insulators from the anticipated quantized value. In this work we consider such a helical edge coupled to dilute impurities with an arbitrary spin $S$ and a general form of the exchange matrix. We calculate the backscattering current noise at finite frequencies as a function of the temperature and applied voltage bias. We find that in addition to the Lorentzian resonance at zero frequency, the backscattering current noise features Fano-type resonances at non-zero frequencies. The widths of the resonances are controlled by the spectrum of corresponding Korringa rates. At a fixed frequency the backscattering current noise has non-monotonic behaviour as a function of the bias voltage.
We consider the measurement of higher current moments with a dissipative resonant circuit, which is coupled inductively to a mesoscopic device in the coherent regime. Information about the higher current moments is coded in the histograms of the charge on the capacitor plates of the resonant circuit. Dissipation is included via the Caldeira-Leggett model, and it is essential to include it in order for the charge fluctuations (or the measured noise) to remain finite. We identify which combination of current correlators enter the measurement of the third moment. The latter remains stable for zero damping. Results are illustrated briefly for a quantum point contact.
By coupling a quantum detector, a superconductor-insulator-superconductor junction, to a Josephson junction textit{via} a resonant circuit we probe the high frequency properties, namely the ac complex admittance and the current fluctuations of the Josephson junction at the resonant frequencies. The admittance components show frequency dependent singularities related to the superconducting density of state while the noise exhibits a strong frequency dependence, consistent with theoretical predictions. The circuit also allows to probe separately the emission and absorption noise in the quantum regime of the superconducting resonant circuit at equilibrium. At low temperature the resonant circuit exhibits only absorption noise related to zero point fluctuations, whereas at higher temperature emission noise is also present.
Plasmons, which are collective charge oscillations, offer the potential to use optical signals in nano-scale electric circuits. Recently, plasmonics using graphene have attracted interest, particularly because of the tunable plasmon frequency through the carrier density $n$. However, the $n$ dependence of the plasmon velocity is weak ($propto n^{1/4}$) and it is difficult to tune the frequency over orders of magnitude. Here, we demonstrate that the velocity of plasmons in graphene can be changed over two orders of magnitude by applying a magnetic field $B$ and by the presence/absence of a gate; at high $B$, edge magnetoplasmons (EMPs), which are plasmons localized at the sample edge, are formed and their velocity depends on $B$ and the gate screening effect. The wide range tunability of the velocity and the observed low-loss plasmon transport encourage designing graphene nanostructures for plasmonics applications.
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