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Register a new userA Biological-Realtime Neuromorphic System in 28 nm CMOS using Low-Leakage Switched Capacitor Circuits
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Added by
Christian Mayr
Publication date
2014
fields
Informatics Engineering
and research's language is
English
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A switched-capacitor (SC) neuromorphic system for closed-loop neural coupling in 28 nm CMOS is presented, occupying 600 um by 600 um. It offers 128 input channels (i.e. presynaptic terminals), 8192 synapses and 64 output channels (i.e. neurons). Biologically realistic neuron and synapse dynam- ics are achieved via a faithful translation of the behavioural equations to SC circuits. As leakage currents significantly affect circuit behaviour at this technology node, dedicated compensation techniques are employed to achieve biological-realtime operation, with faithful reproduction of time constants of several 100 ms at room temperature. Power draw of the overall system is 1.9 mW.
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Developing mixed-signal analog-digital neuromorphic circuits in advanced scaled processes poses significant design challenges. We present compact and energy efficient sub-threshold analog synapse and neuron circuits, optimized for a 28 nm FD-SOI process, to implement massively parallel large-scale neuromorphic computing systems. We describe the techniques used for maximizing density with mixed-mode analog/digital synaptic weight configurations, and the methods adopted for minimizing the effect of channel leakage current, in order to implement efficient analog computation based on pA-nA small currents. We present circuit simulation results, based on a new chip that has been recently taped out, to demonstrate how the circuits can be useful for both low-frequency operation in systems that need to interact with the environment in real-time, and for high-frequency operation for fast data processing in different types of spiking neural network architectures.
As processes continue to scale aggressively, the design of deep sub-micron, mixed-signal design is becoming more and more challenging. In this paper we present an analysis of scaling multi-core mixed-signal neuromorphic processors to advanced 28 nm FD-SOI nodes. We address analog design issues which arise from the use of advanced process, including the problem of large leakage currents and device mismatch, and asynchronous digital design issues. We present the outcome of Monte Carlo Analysis and circuit simulations of neuromorphic sub threshold analog/digital neuron circuits which reproduce biologically plausible responses. We describe the AER used to implement PCHB based asynchronous QDI routing processes in multi-core neuromorphic architectures and validate their operation via circuit simulation results. Finally we describe the implementation of custom 28 nm CAM based memory resources utilized in these multi-core neuromorphic processor and discuss the possibility of increasing density by using advanced RRAM devices integrated in the 28 nm Fully-Depleted Silicon on Insulator (FD-SOI) process.
The progress in neuromorphic computing is fueled by the development of novel nonvolatile memories capable of storing analog information and implementing neural computation efficiently. However, like most other analog circuits, these devices and circuits are prone to imperfections, such as temperature dependency, noise, tuning error, etc., often leading to considerable performance degradation in neural network implementations. Indeed, imperfections are major obstacles in the path of further progress and ultimate commercialization of these technologies. Hence, a practically viable approach should be developed to deal with these nonidealities and unleash the full potential of nonvolatile memories in neuromorphic systems. Here, for the first time, we report a comprehensive characterization of critical imperfections in two analog-grade memories, namely passively-integrated memristors and redesigned eFlash memories, which both feature long-term retention, high endurance, analog storage, low-power operation, and compact nano-scale footprint. Then, we propose a holistic approach that includes modifications in the training, tuning algorithm, memory state optimization, and circuit design to mitigate these imperfections. Our proposed methodology is corroborated on a hybrid software/experimental framework using two benchmarks: a moderate-size convolutional neural network and ResNet-18 trained on CIFAR-10 and ImageNet datasets, respectively. Our proposed approaches allow 2.5x to 9x improvements in the energy consumption of memory arrays during inference and sub-percent accuracy drop across 25-100 C temperature range. The defect tolerance is improved by >100x, and a sub-percent accuracy drop is demonstrated in deep neural networks built with 64x64 passive memristive crossbars featuring 25% normalized switching threshold variations.
Homeostatic plasticity is a stabilizing mechanism that allows neural systems to maintain their activity around a functional operating point. This is an extremely useful mechanism for neuromorphic computing systems, as it can be used to compensate for chronic shifts, for example due to changes in the network structure. However, it is important that this plasticity mechanism operates on time scales that are much longer than conventional synaptic plasticity ones, in order to not interfere with the learning process. In this paper we present a novel ultra-low leakage cell and an automatic gain control scheme that can adapt the gain of analog log-domain synapse circuits over extremely long time scales. To validate the proposed scheme, we implemented the ultra-low leakage cell in a standard 180 nm Complementary Metal-Oxide-Semiconductor (CMOS) process, and integrated it in an array of dynamic synapses connected to an adaptive integrate and fire neuron. We describe the circuit and demonstrate how it can be configured to scale the gain of all synapses afferent to the silicon neuron in a way to keep the neurons average firing rate constant around a set operating point. The circuit occupies a silicon area of 84 {mu}m x 22 {mu}m and consumes approximately 10.8 nW with a 1.8 V supply voltage. It exhibits time constants of up to 25 kilo-seconds, thanks to a controllable leakage current that can be scaled down to 1.2 atto-Amps (7.5 electrons/s).
The development of memristive device technologies has reached a level of maturity to enable the design of complex and large-scale hybrid memristive-CMOS neural processing systems. These systems offer promising solutions for implementing novel in-memory computing architectures for machine learning and data analysis problems. We argue that they are also ideal building blocks for the integration in neuromorphic electronic circuits suitable for ultra-low power brain-inspired sensory processing systems, therefore leading to the innovative solutions for always-on edge-computing and Internet-of-Things (IoT) applications. Here we present a recipe for creating such systems based on design strategies and computing principles inspired by those used in mammalian brains. We enumerate the specifications and properties of memristive devices required to support always-on learning in neuromorphic computing systems and to minimize their power consumption. Finally, we discuss in what cases such neuromorphic systems can complement conventional processing ones and highlight the importance of exploiting the physics of both the memristive devices and of the CMOS circuits interfaced to them.
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