No Arabic abstract
So far magnetic domain walls in one-dimensional structures have been described theoretically only in the cases of flat strips, or cylindrical structures with a compact cross-section, either square or disk. Here we describe an extended phase diagram unifying the two pictures, extensively covering the (width,thickness) space. It is derived on the basis of symmetry and phase-transition arguments, and micromagnetic simulations. A simple classification of all domain walls in two varieties is proposed on the basis of their topology: either with a combined transverse/vortex character, or of the Bloch-point type. The exact arrangement of magnetization within each variety results mostly from the need to decrease dipolar energy, giving rise to asymmetric and curling structures. Numerical evaluators are introduced to quantify curling, and scaling laws are derived analytically for some of the iso-energy lines of the phase diagram.
The one-dimensional problem of a static head-to-head domain wall structure in a thin soft-magnetic nanowire with circular cross-section is treated within the framework of micromagnetic theory. A radius-dependent analytic form of the domain wall profile is derived by decomposing the magnetostatic energy into a monopolar and a dipolar term. We present a model in which the dipolar term of the magnetostatic energy resulting from the transverse magnetization in the center of the domain wall is calculated with Osborns formulas for homogeneously magnetized ellipsoids [Phys. Rev. 67, 351 (1945)]. The analytic results agree almost perfectly with simulation data as long as the wire diameter is sufficiently small to prevent inhomogeneities of the magnetization along the cross-section. Owing to the recently demonstrated negligible Doring mass of these walls, our results should also apply to the dynamic case, where domain walls are driven by spin-transfer toque effects and/or an axial magnetic field.
We study from first-principles the structural and electronic properties of head-to-head (HH) and tail-to-tail (TT) 180$^circ$ domain walls in isolated free-standing PbTiO$_{3}$ slabs. For sufficiently thick domains ($n$ = 16 unit cells of PbTiO$_{3}$), a transfer of charge from the free surfaces to the domain walls to form localized electron (in the HH) and hole (in the TT) gases in order to screen the bound polarization charges is observed. The electrostatic driving force behind this electronic reconstruction is clearly visible from the perfect match between the smoothed free charge densities and the bound charge distribution, computed from a finite difference of the polarization profile obtained after the relaxation of the lattice degrees of freedom. The domain wall widths, of around six unit cells, are larger than in the conventional 180$^circ$ neutral configurations. Since no oxygen vacancies, defects or dopant atoms are introduced in our simulations, all the previous physical quantities are the intrinsic limits of the system. Our results support the existence of an extra source of charge at the domains walls to explain the enhancement of the conductivity observed in some domains walls of prototypical, insulating in bulk, perovskite oxides.
Cylindrical nanowires made of soft magnetic materials, in contrast to thin strips, may host domain walls of two distinct topologies. Unexpectedly, we evidence experimentally the dynamic transformation of topology upon wall motion above a field threshold. Micromagnetic simulations highlight the underlying precessional dynamics for one way of the transformation, involving the nucleation of a Bloch-point singularity, however, fail to reproduce the reverse process. This rare discrepancy between micromagnetic simulations and experiments raises fascinating questions in material and computer science.
We investigate analytically and numerically the dynamics of domain walls in a spin chain with ferromagnetic Ising interaction and subject to an external magnetic field perpendicular to the easy magnetization axis (transverse field Ising model). The analytical results obtained within the continuum approximation and numerical simulations performed for discrete classical model are used to analyze the quantum properties of domain walls using the semiclassical approximation. We show that the domain wall spectrum shows a band structure consisting of 2$S$ non-intersecting zones.
The stochasticity of domain wall (DW) motion in magnetic nanowires has been probed by measuring slow fluctuations, or noise, in electrical resistance at small magnetic fields. By controlled injection of DWs into isolated cylindrical nanowires of nickel, we have been able to track the motion of the DWs between the electrical leads by discrete steps in the resistance. Closer inspection of the time-dependence of noise reveals a diffusive random walk of the DWs with an universal kinetic exponent. Our experiments outline a method with which electrical resistance is able to detect the kinetic state of the DWs inside the nanowires, which can be useful in DW-based memory designs.