Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userDesigned Three-Dimensional Freestanding Single-Crystal Carbon Architectures
213
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Single-crystal carbon nanomaterials have led to great advances in nanotechnology. The first single-crystal carbon nanomaterial, fullerene, was fabricated in a zero-dimensional form. One-dimensional carbon nanotubes and two-dimensional graphene have since followed and continue to provide further impetus to this field. In this study, we fabricated designed three-dimensional (3D) single-crystal carbon architectures by using silicon carbide templates. For this method, a designed 3D SiC structure was transformed into a 3D freestanding single-crystal carbon structure that retained the original SiC structure by performing a simple single-step thermal process. The SiC structure inside the 3D carbon structure is self-etched, which results in a 3D freestanding carbon structure. The 3D carbon structure is a single crystal with the same hexagonal close-packed structure as graphene. The size of the carbon structures can be controlled from the nanoscale to the microscale, and arrays of these structures can be scaled up to the wafer scale. The 3D freestanding carbon structures were found to be mechanically stable even after repeated loading. The relationship between the reversible mechanical deformation of a carbon structure and its electrical conductance was also investigated. Our method of fabricating designed 3D freestanding single-crystal graphene architectures opens up prospects in the field of single-crystal carbon nanomaterials, and paves the way for the development of 3D single-crystal carbon devices.
rate research
Read More
We employ three dimensional x-ray coherent diffraction imaging to map the lattice strain distribution, and to probe the elastic properties of a single crystalline Ni (001) nanowire grown vertically on an amorphous Si02 || Si substrate. The reconstructed density maps show that with increasing wire width, the equilibrium compressive stress in the core region decreases sharply while the surface tensile strain increases, and gradually trends to a nonzero constant. We use the retrieved projection of lattice distortion to predict the Youngs Modulus of the wire based on the elasticity theory.
We study theoretically the transport properties of a three-dimensional spin texture made from three orthogonal helices, which is essentially a lattice of monopole-antimonopole pairs connected by Skyrmion strings. This spin structure is proposed for MnGe based on the neutron scattering experiment as well as the Lorentz transmission electron microscopy observation. Equipped with a sophisticated spectral analysis method, we adopt finite temperature Greens function technique to calculate the longitudinal dc electric transport in such system. We consider conduction electrons interacting with spin waves of the topologically nontrivial spin texture, wherein fluctuations of monopolar emergent magnetic field enter. We study in detail the behavior of electric resistivity under the influence of temperature, external magnetic field and a characteristic monopole motion, especially a novel magnetoresistivity effect describing the latest experimental observations in MnGe, wherein a topological phase transition signifying strong correlation is identified.
A Mn4 single-molecule magnet (SMM) is used to show that quantum tunneling of magnetization (QTM) is not suppressed by moderate three dimensional exchange coupling between molecules. Instead, it leads to an exchange bias of the quantum resonances which allows precise measurements of the effective exchange coupling that is mainly due to weak intermolecular hydrogen bounds. The magnetization versus applied field was recorded on single crystals of [Mn4]2 using an array of micro-SQUIDs. The step fine structure was studied via minor hysteresis loops.
With the best overall electronic and thermal properties, single-crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors faces doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion-implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional boron doping in natural SCD without any phase transitions or lattice damage which can be readily realized with thermal diffusion at relatively low temperature. For the boron doping, we employ a unique dopant carrying medium: heavily doped Si nanomembranes. We further demonstrate selectively doped high-voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high-voltage power conversion systems and for other novel diamond-based electronics.
We describe a method to fabricate clean suspended single-wall carbon nanotube (SWCNT) transistors hosting a single quantum dot ranging in length from a few 10s of nm down to $approx$ 3 nm. We first align narrow gold bow-tie junctions on top of individual SWCNTs and suspend the devices. We then use a feedback-controlled electromigration to break the gold junctions and expose nm-sized sections of SWCNTs. We measure electron transport in these devices at low temperature and show that they form clean and tunable single-electron transistors. These ultra-short suspended transistors offer the prospect of studying THz oscillators with strong electron-vibron coupling.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
