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Register a new userElectronic structure of Ce2RhIn8 2D heavy Fermion system studied by angle resolved photoemission spectroscopy
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We use angle-resolved photoemission spectroscopy to study heavy fermion superconductor Ce2RhIn8. The Fermi surface is rather complicated and consists of several hole and electron pock- ets. We do not observe kz dispersion of Fermi sheets, which is consistent with 2D character of the electronic structure. Comparison of the ARPES data and band structure calculations points to a localized picture of f electrons. Our findings pave the way for understanding the transport and thermodynamical properties of this material.
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We have carried out high-resolution angle-resolved photoemission measurements on the Cebased heavy fermion compound CePt2In7 that exhibits stronger two-dimensional character than the prototypical heavy fermion system CeCoIn5. Multiple Fermi surface sheets and a complex band structure are clearly resolved. We have also performed detailed band structure calculations on CePt2In7. The good agreement found between our measurements and the calculations suggests that the band renormalization effect is rather weak in CePt2In7. A comparison of the common features of the electronic structure of CePt2In7 and CeCoIn5 indicates that CeCoIn5 shows a much stronger band renormalization effect than CePt2In7. These results provide new information for understanding the heavy fermion behaviors and unconventional superconductivity in Ce-based heavy fermion systems.
We systemically investigate the nature of Ce 4f electrons in structurally layered heavy-fermion compounds CcmMnIn3m+2n (with M =Co, Rh, Ir, and Pt, m=l, 2, n=0 - 2), at low temperature using on-resonance angle-resolved photoemission spectroscopy. Three heavy quasiparticle bands f^0, f^1_7/2 and f^1_5/2 are observed in all compounds, but their intensities and energy locations vary greatly with materials. The strong f^0 states imply that the localized electron behavior dominates the Ce 4f states. The Ce 4f electrons are partially hybridized with the conduction electrons, making them have the dual nature of localization and itinerant. Our quantitative comparison reveals that the f^1_5/2 / f^0 intensity ratio is more suitable to reflect the 4f-state hybridization strength.
The localized-to-itinerant transition of f electrons lies at the heart of heavy-fermion physics, but has only been directly observed in single-layer Ce-based materials. Here, we report a comprehensive study on the electronic structure and nature of the Ce 4f electrons in the heavy-fermion superconductor Ce2PdIn8, a typical n=2 CenMmIn3n+2m compound, using high-resolution and 4d-4f resonance photoemission spectroscopies. The electronic structure of this material has been studied over a wide temperature range, and hybridization between f and conduction electrons can be clearly observed to form a Kondo resonance near the Fermi level at low temperatures. The characteristic temperature of the localized-to-itinerant transition is around 120K, which is much higher than its coherence temperature Tcoh~30K.
PtBi2 with a layered trigonal crystal structure was recently reported to exhibit an unconventional large linear magnetoresistance, while the mechanism involved is still elusive. Using high resolution angle-resolved photoemission spectroscopy, we present a systematic study on its bulk and surface electronic structure. Through careful comparison with first-principle calculations, our experiment distinguishes the low-lying bulk bands from entangled surface states, allowing the estimation of the real stoichiometry of samples. We find significant electron doping in PtBi2, implying a substantial Bi deficiency induced disorder therein. We discover a Dirac-cone-like surface state on the boundary of the Brillouin zone, which is identified as an accidental Dirac band without topological protection. Our findings exclude quantum-limit-induced linear band dispersion as the cause of the unconventional large linear magnetoresistance.
We studied the electronic structure of the heavy fermion compound Yb(Ru$_{1-x}$Rh$_{x}$)$_2$Ge$_2$ with $x=0$ and nominally $x=0.125$ using ARPES and LDA calculations. We find a valence band structure of Yb corresponding to a non-integer valence close to $3+$. The three observed crystal electric field levels with a splitting of 32 and 75 meV confirm the suggested configuration with a quasi-quartet ground state. The experimentally determined band structure of the conduction electrons with predominantly Ru $4d$ character is well reproduced by our calculations. YbRu$_2$Ge$_2$ undergoes a non-magnetic phase transition into a ferroquadrupolar ordered state below 10.2,K and then to an antiferromagnetically ordered state below 6.5,K. A small hole Fermi surface shows nesting features in our calculated band structure and its size determined by ARPES is close to the magnetic ordering wave vector found in neutron scattering. The transitions are suppressed when YbRu$_2$Ge$_2$ is doped with 12.5% Rh. The electron doping leads to a shift of the band structure and successive Lifshitz transitions.
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