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The results of measurements of XPS spectra and magnetic properties of graphene/Co composites prepared by adding of CoCl$_2$x6H$_2$O diluted in ethyl alcohol to highly-splitted graphite are presented. XPS Co 2p measurements show two sets of 2p$_{3/2,1/2}$-lines belonging to oxidized and metallic Co-atoms. This means that metal in composite is partly oxidized. This conclusion is confirmed by magnetic measurements which show the presence of the main (from the metal) and shifted (from the oxide) hysteresis loops. The presence of oxide layer on the metal surface prevents the metal from the full oxidation and (as shown by magnetic measurements) provides the preservation of ferromagnetic properties after long exposure in ambient air which enables the use of graphene/metal composites in spintronics devices.
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Experimental and theoretical studies of manganese deposition on graphene/Ni(111) shows that a thin ferromagnetic Ni3Mn layer, which is protected by the graphene overlayer, is formed upon Mn intercalation. The electronic bands of graphene are affected by Ni3Mn interlayer formation through a slight reduction of n-type doping compared to graphene/Ni(111) and a suppression of the interface states characteristic of graphene/Ni(111). Our DFT-based theoretical analysis of interface geometric, electronic, and magnetic structure gives strong support to our interpretation of the experimental scanning tunneling microscopy, low energy electron diffraction, and photoemission results, and shows that the magnetic structure of graphene is strongly influenced by Ni3Mn formation.
We report the results of an experimental study of thermal and magnetic properties of nanostructured ferrimagnetic iron oxide composites with graphene and graphite fillers synthesized via the current activated pressure assisted densification. The thermal conductivity was measured using the laser-flash and transient plane source techniques. It was demonstrated that addition of 5 wt. % of equal mixture of graphene and graphite flakes to the composite results in a factor of x2.6 enhancement of the thermal conductivity without significant degradation of the saturation magnetization. The microscopy and spectroscopic characterization reveal that sp2 carbon fillers preserve their crystal structure and morphology during the composite processing. The strong increase in the thermal conductivity was attributed to the excellent phonon heat conduction properties of graphene and graphite. The results are important for energy and electronic applications of the nanostructured permanent magnets.
We review progress in developing epitaxial graphene as a material for carbon electronics. In particular, improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphenes electronic properties are discussed. Although graphene grown on both polar faces of SiC is addressed, our discussions will focus on graphene grown on the (000-1) C-face of SiC. The unique properties of C-face multilayer epitaxial graphene have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal-stacked graphite sample. The origin of multilayer graphenes electronic behavior is its unique highly-ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that causes each sheet to behave like an isolated graphene plane.
We have investigated the microwave properties of epoxy-based composites containing melt-extracted Co69.25Fe4. 25B13.5-xSi13Nbx (x=0, 1, 3) microwires of various length annealed using a so-called combined current-modulation annealing (CCMA) technique. The observation of a double-peak feature in the permittivity spectra is believed due to the coexistence of the amorphous phase and a small amount of nanocrystallites on the wires with a high Nb content. CCMA was found to be favorable for a better-defined circular anisotropy of microwires and had suppressed the highfrequency peak due to residual stress relief for the composite with 25 mm long wires. Neither the shift of resonance peak nor the characteristic double peak feature was detected for composites containing as-cast 15 or 35 mm long microwires.
The implementation of graphene in semiconducting technology requires the precise knowledge about the graphene-semiconductor interface. In our work the structure and electronic properties of the graphene/$n$-Ge(110) interface are investigated on the local (nm) and macro (from $mumathrm{m}$ to mm) scales via a combination of different microscopic and spectroscopic surface science techniques accompanied by density functional theory calculations. The electronic structure of freestanding graphene remains almost completely intact in this system, with only a moderate $n$-doping indicating weak interaction between graphene and the Ge substrate. With regard to the optimization of graphene growth it is found that the substrate temperature is a crucial factor, which determines the graphene layer alignment on the Ge(110) substrate during its growth from the atomic carbon source. Moreover, our results demonstrate that the preparation routine for graphene on the doped semiconducting material ($n$-Ge) leads to the effective segregation of dopants at the interface between graphene and Ge(110). Furthermore, it is shown that these dopant atoms might form regular structures at the graphene/Ge interface and induce the doping of graphene. Our findings help to understand the interface properties of the graphene-semiconductor interfaces and the effect of dopants on the electronic structure of graphene in such systems.
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