No Arabic abstract
Changes of the electronic structure accompanied by charge localization and a transition to an antiferromagnetic ground state were observed in the (DOEO)$_4$[HgBr$_4$]TCE organic semiconductor. Localization starts in the region of about 150 K and the antiferromagnetic state occurs below 60 K. The magnetic moment of the crystal contains contributions of antiferromagnetic inclusions (droplets), individual paramagnetic centers formed by localized holes and free charge carriers at 2 K. Two types of inclusions of 100-400 nm and 2-5 nm sizes were revealed by transmission electron microscopy. Studying the symmetry of the antiferromagnetic droplets (100-400 nm inclusions) and individual localized holes by electron spin resonance (ESR) revealed fingerprints of the antiferromagnetic resonance spectra of the spin correlated droplets as well as paramagnetic resonance spectra of the individual localized charge carriers. Photoelectron spectroscopy in the VUV, soft and hard X-ray range shows temperature-dependent effects upon crossing the critical temperature. The substantially different probing depths of soft and hard X-ray photoelectron spectroscopy yield information on the surface termination. The combined investigation using soft and hard X-ray photons to study the same sample results in details of electronic structure including structural aspects at the surface.
The temperature dependence of electronic and magnetic properties of the organic charge-transfer salt (DOEO)$_4$[HgBr$_4$]TCE was investigated using magnetometry. Electronic transport properties revealed three distinct phases which are related to different magnetic coupling phenomena. In the low-temperature insulating phase (T<70 K) the antiferromagnetic coupling between two distinct sites of magnetic moments causes antiferromagnetic order below the Neel temperature T$_N$=40 K. In the temperature region 70-120 K the (DOEO)$_4$[HgBr$_4$]TCE shows metallic-like behavior and with further increasing of temperature it becomes a bad metal due to loss of itinerant character and increase of hopping conductivity of charge carriers.
Strongly correlated electrons in layered perovskite structures have been the birthplace of high-temperature superconductivity, spin liquid, and quantum criticality. Specifically, the cuprate materials with layered structures made of corner sharing square planar CuO$_4$ units have been intensely studied due to their Mott insulating grounds state which leads to high-temperature superconductivity upon doping. Identifying new compounds with similar lattice and electronic structures has become a challenge in solid state chemistry. Here, we report the hydrothermal crystal growth of a new copper tellurite sulfate Cu$_3$(TeO$_4$)(SO$_4$)$cdot$H$_2$O, a promising alternative to layered perovskites. The orthorhombic phase (space group $Pnma$) is made of corrugated layers of corner-sharing CuO$_4$ square-planar units that are edge-shared with TeO$_4$ units. The layers are linked by slabs of corner-sharing CuO$_4$ and SO$_4$. Using both the bond valence sum analysis and magnetization data, we find purely Cu$^{2+}$ ions within the layers, but a mixed valence of Cu$^{2+}$/Cu${^+}$ between the layers. Cu$_3$(TeO$_4$)(SO$_4$)$cdot$H$_2$O undergoes an antiferromagnetic transition at $T_N$=67 K marked by a peak in the magnetic susceptibility. Upon further cooling, a spin-canting transition occurs at $T^{star}$=12 K evidenced by a kink in the heat capacity. The spin-canting transition is explained based on a $J_1$-$J_2$ model of magnetic interactions, which is consistent with the slightly different in-plane super-exchange paths. We present Cu$_3$(TeO$_4$)(SO$_4$)$cdot$H$_2$O as a promising platform for the future doping and strain experiments that could tune the Mott insulating ground state into superconducting or spin liquid states.
The charge transfer compound (BEDT-TTF)$_2$Ag(CF$_3$)$_4$(TCE) crystallizes in three polymorphs with different alternating layers: While a phase with a $kappa$ packing motif has a low superconducting transition temperature of $T_c=2.6$ K, two phases with higher $T_c$ of $9.5$ and $11$ K are multi-layered structures consisting of $alpha$ and $kappa$ layers. We investigate these three systems within density functional theory and find that the $alpha$ layer shows different degrees of charge order for the two $kappa$-$alpha$ systems and directly influences the electronic behavior of the conducting $kappa$ layer. We discuss the origin of the distinct behavior of the three polymorphs and propose a minimal tight-binding Hamiltonian for the description of these systems based on projective molecular Wannier functions.
The organic metal theta$-(BETS)$_4$HgBr$_4$(C$_6$H$_5$Cl) is known to undergo a phase transition as the temperature is lowered down to about 240 K. X-ray data obtained at 200 K indicate a corresponding modification of the crystal structure, the symmetry of which is lowered from quadratic to monoclinic. In addition, two different types of cation layers are observed in the unit cell. The Fermi surface (FS), which can be regarded as a network of compensated electron and hole orbits according to band structure calculations at room temperature, turns to a set of two alternating linear chains of orbits at low temperature. The field and temperature dependence of the Shubnikov-de Haas oscillations spectrum have been studied up to 54 T. Eight frequencies are observed which, in any case, points to a FS much more complex than predicted by band structure calculations at room temperature, even though some of the observed Fourier components might be ascribed to magnetic breakdown or frequency mixing. The obtained spectrum could result from either an interaction between the FSs linked to each of the two cation layers or to an eventual additional phase transition in the temperature range below 200 K.
Motivated by a recent inelastic neutron scattering experiment on $mathrm{YbMgGaO}_4$ cite{William2019}, we reinvestigate the homogeneous spin model on the triangular lattice. Using the cluster mean-field theory, we study the phase diagram and the magnetic-field-induced phase transition. We find that the phase boundary between the stripe state and the $120^{circ}$ antiferromagnetic state is broadened by the magnetic field, leading to a field-induced phase transition. This phase transition is suppressed by the next-nearest neighbor exchange interaction $J_2/J_1$ and vanishes as $J_2/J_1>0.13$. We find a parameter space at $J_2/J_1=0.1$, in which the field-induce transition can be achieved and the deviation of theoretical spin excitation energies from experimental data is only $5.4%$. Our results imply that an effective homogeneous spin model still works in $mathrm{YbMgGaO}_4$.