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Register a new userDiamond electro-optomechanical resonators integrated in nanophotonic circuits
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Diamond integrated photonic devices are promising candidates for emerging applications in nanophotonics and quantum optics. Here we demonstrate active modulation of diamond nanophotonic circuits by exploiting mechanical degrees of freedom in free-standing diamond electro-optomechanical resonators. We obtain high quality factors up to 9600, allowing us to read out the driven nanomechanical response with integrated optical interferometers with high sensitivity. We are able to excite higher order mechanical modes up to 115 MHz and observe the nanomechanical response also under ambient conditions.
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Monolayer transition metal dichalcogenides with direct bandgaps are emerging candidates for microelectronics, nano-photonics, and optoelectronics. Transferred onto photonic integrated circuits (PICs), these semiconductor materials have enabled new classes of light-emitting diodes, modulators and photodetectors, that could be amenable to wafer-scale manufacturing. For integrated photonic devices, the optical losses of the PICs are critical. In contrast to silicon, silicon nitride (Si3N4) has emerged as a low-loss integrated platform with a wide transparency window from ultraviolet to mid-infrared and absence of two-photon absorption at telecommunication bands. Moreover, it is suitable for nonlinear integrated photonics due to its high Kerr nonlinearity and high-power handing capability. These features of Si3N4 are intrinsically beneficial for nanophotonics and optoelectronics applications. Here we report a low-loss integrated platform incorporating monolayer molybdenum ditelluride (1L-MoTe2) with Si3N4 photonic microresonators. We show that, with the 1L-MoTe2, microresonator quality factors exceeding 3 million in the telecommunication O-band to E-band are maintained. We further investigate the change of microresonator dispersion and resonance shift due to the presence of 1L-MoTe2, and extrapolate the optical loss introduced by 1L-MoTe2 in the telecommunication bands, out of the excitonic transition region. Our work presents a key step for low-loss, hybrid PICs with layered semiconductors without using heterogeneous wafer bonding.
Optical nonlinearity plays a pivotal role in quantum information processing using photons, from heralded single-photon sources to long-sought quantum repeaters. Despite the availability of strong light-atom interaction, an all-optical nonlinearity is highly desired for more scalable quantum protocols. Here, we realize quantum nanophotonic integrated circuits in thin-film InGaP with a record-high second-order optical nonlinearity of $1.5%$---the ratio of the single-photon trimodal coupling strength ($g/2pi=11.2$ MHz) and cavity-photon loss rate. We demonstrate photon-pair generation via degenerate spontaneous parametric down conversion in the InGaP photonic circuit with an ultrahigh rate exceeding 27.5 MHz per 1 $mu$W pump power and large coincidence-to-accidental ratio up to $1.4times 10^4$. Our work shows InGaP as a potentially transcending platform for quantum nonlinear optics and quantum information applications.
Future quantum computation and networks require scalable monolithic circuits, which incorporate various advanced functionalities on a single physical substrate. Although substantial progress for various applications has already been demonstrated on different platforms, the range of diversified manipulation of photonic states on demand on a single chip has remained limited, especially dynamic time management. Here, we demonstrate an electro-optic device, including photon pair generation, propagation, electro-optical path routing, as well as a voltage-controllable time delay of up to ~ 12 ps on a single Ti:LIbO3 waveguide chip. As an example, we demonstrate Hong-Ou-Mandel interference with a visibility of more than 93$pm$ 1.8%. Our chip not only enables the deliberate manipulation of photonic states by rotating the polarization but also provides precise time control. Our experiment reveals that we have full flexible control over single-qubit operations by harnessing the complete potential of fast on-chip electro-optic modulation.
We demonstrate integrated optomechanical circuits with high mechanical quality factors prepared from nanocrystalline diamond thin films. Using chemomechanical polishing, the RMS surface roughness of as grown polycrystalline diamond films is reduced below 3nm to allow for the fabrication of high-quality nanophotonic circuits. By integrating free-standing nanomechanical resonators into integrated optical devices, efficient read-out of the thermomechanical motion of diamond resonators is achieved with on-chip Mach-Zehnder interferometers. Mechanical quality factors up to 28,800 are measured for four-fold clamped optomechanical resonators coupled to the evanescent near-field of nanophotonic waveguides. Our platform holds promise for large-scale integration of optomechanical circuits for on-chip metrology and sensing applications.
Modern communication networks require high performance and scalable electro-optic modulators that convert electrical signals to optical signals at high speed. Existing lithium niobate modulators have excellent performance but are bulky and prohibitively expensive to scale up. Here we demonstrate scalable and high-performance nanophotonic electro-optic modulators made of single-crystalline lithium niobate microring resonators and micro-Mach-Zehnder interferometers. We show a half-wave electro-optic modulation efficiency of 1.8V$cdot$cm and data rates up to 40 Gbps.
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