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Register a new userTwo-band conductivity of a FeSe$_{0.5}$Te$_{0.5}$ film by reflectance measurements in the terahertz and infrared range
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We report an infrared spectroscopy study of a 200 nm thick FeSe$_{0.5}$Te$_{0.5}$ film grown on LaAlO$_3$ with T$_c$=13.7 K. We analyze the 20 K normal state absolute reflectance R$_N$ measured over a broad infrared range and the reflectance ratio R$_S$/R$_N$, R$_S$ being the superconducting state reflectance, measured at 6 K in the terahertz range down to 12 cm$^{-1}$. We show that the normal state model conductivity is given by two Drude components, one of which much broader and intense than the other. In the superconducting state, we find that a gap $Delta$=37$pm$3 cm$^{-1}$ opens up in the narrow Drude band only, while the broad Drude band results to be ungapped, at least in the explored spectral range. Our results show that only a two-band model can coherently describe both normal and superconducting state data.
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Using a field-effect transistor (FET) configuration with solid Li-ion conductor (SIC) as gate dielectric, we have successfully tuned carrier density in FeSe$_{0.5}$Te$_{0.5}$ thin flakes, and the electronic phase diagram has been mapped out. It is found that electron doping controlled by SIC-FET leads to a suppression of the superconducting phase, and eventually gives rise to an insulating state in FeSe$_{0.5}$Te$_{0.5}$. During the gating process, the (001) peak in XRD patterns stays at the same position and no new diffraction peak emerges, indicating no evident Li$^+$ ions intercalation into the FeSe$_{0.5}$Te$_{0.5}$. It indicates that a systematic change of electronic properties in FeSe$_{0.5}$Te$_{0.5}$ arises from the electrostatic doping induced by the accumulation of Li$^+$ ions at the interface between FeSe$_{0.5}$Te$_{0.5}$ and solid ion conductor in the devices. It is striking that these findings are drastically different from the observation in FeSe thin flakes using the same SIC-FET, in which $T_c$ is enhanced from 8 K to larger than 40 K, then the system goes into an insulating phase accompanied by structural transitions.
We measured the complex conductivity, $sigma$, of FeSe$_{1-x}$Te$_x$ ($x=0-0.5$) films in the superconducting state which show a drastic increase of the superconducting transition temperature, $T_textrm{c}$, when the nematic order disappears. Since the magnetic penetration depth, $lambda$ $(>$ 400 nm), of Fe(Se,Te) is longer than the typical thickness of the film ($sim$100 nm), we combined the coplanar waveguide resonator and cavity perturbation techniques to evaluate both the real and imaginary parts of $sigma$. Films with a nematic order showed a qualitatively different temperature dependence in penetration depth and quasiparticle scattering time when compared with those without nematic order, suggesting that nematic order influences the superconducting gap structure. Conversely, the proportionality between superfluid density, $n_textrm{s}$ ($proptolambda^{-2}$), and $T_textrm{c}$ was observed irrespective of the presence or absence of nematic order. This result indicates that the amount of superfluid has a stronger impact on the $T_textrm{c}$ of Fe(Se,Te) than the presence or absence of nematic order. Combining these results with band dispersions calculated using density functional theory, we propose that the change of the Fermi surface associated with nematicity is the primary factor influencing the change of $T_textrm{c}$ and the superconducting gap structure in Fe(Se,Te).
We present direct measurements of the superconducting order parameter in nearly optimal FeSe$_{0.5}$Te$_{0.5}$ single crystals with critical temperature $T_C approx 14$ K. Using intrinsic multiple Andreev reflection effect (IMARE) spectroscopy and measurements of lower critical field, we directly determined two superconducting gaps, $Delta_L approx 3.3 - 3.4$ meV and $Delta_S approx 1$ meV, and their temperature dependences. We show that a two-band model fits well the experimental data. The estimated electron-boson coupling constants indicate a strong intraband and a moderate interband interaction.
We present our investigations on the superconducting properties of monolayers of FeSe$_{0.5}$Te$_{0.5}$ grown on the 3D topological insulator Bi$_{2}$Se$_{1.2}$Te$_{1.8}$ using low temperature scanning tunneling spectroscopy (STS). While the morphology and the overall transition temperature resemble those of similarly doped bulk crystals, the spatially resolved spectroscopic data at 1.1K shows a much larger spatial inhomogeneity in the superconducting energy gaps. Despite the gap inhomogeneity all the spectra can be fitted with a two-fold anisotropic s-wave gap function. The two-fold nature of the gap symmetry is evident from the Bogoliubov quasiparticle interference (QPI) pattern which shows distinct C$_{2}$ symmetric scattering intensities. We argue that the gap inhomogeneity emerges as a result of intrinsic disorder in our system similar to disordered conventional superconductors. Even though most of our findings clearly differ from the current understanding of the corresponding bulk system, it provides an ideal platform to study unconventional superconductivity in Fe chalcogenides thinned down to a single layer and in close proximity to a topological insulator.
Polycrystalline samples of FeSe$_{0.5}$Te$_{0.5}$ were synthesized using a conventional solid-state reaction method. The onset of bulk superconductivity transition was confirmed by SQUID magnetometry at 12.5~K. $^{57}$Fe Mossbauer spectra in transmission geometry were recorded at temperatures between 6.0 and 320 K. Both the isomer shift and the total absorption started to drop about $T_c$, indicating a softening of the lattice. The drop is estimated to correspond to at least 60~K from the original Debye temperature $theta_{rm D}approx 460$~K. Seebeck measurements indicate that the samples are $n$-type conductors at low temperatures with a cross-over to $p$-type conductivity around 135 K. The zero Seebeck coefficient is seen below $10.6$~K.
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