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Register a new userKondo effect in binuclear metal-organic complexes with weakly interacting spins
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We report a combined experimental and theoretical study of the Kondo effect in a series of binuclear metal-organic complexes of the form [(Me(hfacac)_2)_2(bpym)]^0, with Me = Nickel (II), Manganese(II), Zinc (II); hfacac = hexafluoroacetylacetonate, and bpym = bipyrimidine, adsorbed on Cu(100) surface. While Kondo-features did not appear in the scanning tunneling spectroscopy spectra of non-magnetic Zn_2, a zero bias resonance was resolved in magnetic Mn_2 and Ni_2 complexes. The case of Ni_2 is particularly interesting as the experiments indicate two adsorption geometries with very different properties. For Ni_2-complexes we have employed density functional theory to further elucidate the situation. Our simulations show that one geometry with relatively large Kondo temperatures T_K ~ 10K can be attributed to distorted Ni_2 complexes, which are chemically bound to the surface via the bipyrimidine unit. The second geometry, we assign to molecular fragmentation: we suggest that the original binuclear molecule decomposes into two pieces, including Ni(hexafluoroacetylacetonate)_2, when brought into contact with the Cu-substrate. For both geometries our calculations support a picture of the (S=1)-type Kondo effect emerging due to open 3d shells of the individual Ni^{2+} ions.
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We report on theoretical and experimental study of the spin polarization recovery and Hanle effect for the charge carriers interacting with the fluctuating nuclear spins in the semiconductor structures. We start the theoretical description from the simplest model of static and isotropic nuclear spin fluctuations. Then we describe the modification of the polarization recovery and Hanle curves due to the anisotropy of the hyperfine interaction, finite nuclear spin correlation time, and the strong pulsed spin excitation. For the latter case, we describe the resonance spin amplification effect in the Faraday geometry and discuss the manifestations of the quantum Zeno effect. The set of the experimental results for various structures and experimental conditions is chosen to highlight the specific effects predicted theoretically. We show that the spin polarization recovery is a very valuable tool for addressing carrier spin dynamics in semiconductors and their nanostructures.
A combined analytical and numerical study is performed of the mapping between strongly interacting fermions and weakly interacting spins, in the framework of the Hubbard, t-J and Heisenberg models. While for spatially homogeneous models in the thermodynamic limit the mapping is thoroughly understood, we here focus on aspects that become relevant in spatially inhomogeneous situations, such as the effect of boundaries, impurities, superlattices and interfaces. We consider parameter regimes that are relevant for traditional applications of these models, such as electrons in cuprates and manganites, and for more recent applications to atoms in optical lattices. The rate of the mapping as a function of the interaction strength is determined from the Bethe-Ansatz for infinite systems and from numerical diagonalization for finite systems. We show analytically that if translational symmetry is broken through the presence of impurities, the mapping persists and is, in a certain sense, as local as possible, provided the spin-spin interaction between two sites of the Heisenberg model is calculated from the harmonic mean of the onsite Coulomb interaction on adjacent sites of the Hubbard model. Numerical calculations corroborate these findings also in interfaces and superlattices, where analytical calculations are more complicated.
We investigate the spin relaxation and Kondo resistivity caused by magnetic impurities in doped transition metal dichalcogenides monolayers. We show that momentum and spin relaxation times due to the exchange interaction by magnetic impurities, are much longer when the Fermi level is inside the spin split region of the valence band. In contrast to the spin relaxation, we find that the dependence of Kondo temperature $T_K$ on the doping is not strongly affected by the spin-orbit induced splitting, although only one of the spin species are present at each valley. This result, which is obtained using both perturbation theory and poor mans scaling methods, originates from the intervalley spin-flip scattering in the spin-split region. We further demonstrate the decline in the conductivity with temperatures close to $T_K$ which can vary with the doping. Our findings reveal the qualitative difference with the Kondo physics in conventional metallic systems and other Dirac materials.
Graphene is a model system for the study of electrons confined to a strictly two-dimensional layer1 and a large number of electronic phenomena have been demonstrated in graphene, from the fractional2, 3 quantum Hall effect to superconductivity4. However, the coupling of conduction electrons to local magnetic moments5, 6, a central problem of condensed matter physics, has not been realized in graphene, and, given carbons lack of d or f electrons, magnetism in graphene would seem unlikely. Nonetheless, magnetism in graphitic carbon in the absence of transition-metal elements has been reported7-10, with explanations ranging from lattice defects11 to edge structures12, 13 to negative curvature regions of the graphene sheet14. Recent experiments suggest that correlated defects in highly-ordered pyrolytic graphite (HOPG) induced by proton irradiation9 or native to grain boundaries7, can give rise to ferromagnetism. Here we show that point defects (vacancies) in graphene15 are local moments which interact strongly with the conduction electrons through the Kondo effect6, 16-18 providing strong evidence that defects in graphene are indeed magnetic. The Kondo temperature TK is tunable with carrier density from 30-90 K; the high TK is a direct consequence of strong coupling of defects to conduction electrons in a Dirac material18. The results indicate that defect engineering in graphene could be used to generate and control carrier-mediated magnetism, and realize all-carbon spintronic devices. Furthermore, graphene should be an ideal system in which to probe Kondo physics in a widely tunable electron system.
We suggest a new spin orientation mechanism for localized electrons: $dynamic~electron~spin~polarization~provided~by~nuclear~spin~fluctuations$. The angular momentum for the electrons is gained from the nuclear spin system via the hyperfine interaction in a weak magnetic field. For this the sample is illuminated by an unpolarized light, which directly polarizes neither the electrons nor the nuclei. We predict, that for the electrons bound in localized excitons 100% spin polarization can be reached in longitudinal magnetic fields of a few millitesla. The proof of principle experiment is performed on momentum-indirect excitons in (In,Al)As/AlAs quantum dots, where in a magnetic field of 17 mT the electron spin polarization of 30% is measured.
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