No Arabic abstract
Rare earth free alloys are in focus of permanent magnet research since the accessibility of the elements needed for nowadays conventional magnets is limited. Tetragonally strained iron-cobalt (Fe-Co) has attracted large interest as promising candidate due to theoretical calculations. In experiments, however, the applied strain quickly relaxes with increasing film thickness and hampers stabilization of a strong magnetocrystalline anisotropy. In our study we show that already 2 at% of carbon substantially reduce the lattice relaxation leading to the formation of a spontaneously strained phase with 3 % tetragonal distortion. In these strained (Fe$_{0.4}$Co$_{0.6}$)$_{0.98}$C$_{0.02}$ films, a magnetocrystalline anisotropy above 0.4 MJ/m$^3$ is observed while the large polarization of 2.1 T is maintained. Compared to binary Fe-Co this is a remarkable improvement of the intrinsic magnetic properties. In this paper, we relate our experimental work to theoretical studies of strained Fe-Co-C and find a very good agreement.
We demonstrate that chiral skyrmionic magnetization configurations can be found as the minimum energy state in B20 thin film materials with easy-plane magnetocrystalline anisotropy with an applied magnetic field perpendicular to the film plane. Our observations contradict results from prior analytical work, but are compatible with recent experimental investigations. The size of the observed skyrmions increases with the easy-plane magnetocrystalline anisotropy. We use a full micromagnetic model including demagnetization and a three-dimensional geometry to find local energy minimum (metastable) magnetization configurations using numerical damped time integration. We explore the phase space of the system and start simulations from a variety of initial magnetization configurations to present a systematic overview of anisotropy and magnetic field parameters for which skyrmions are metastable and global energy minimum (stable) states.
We show tunable strain-induced perpendicular magnetic anisotropy (PMA) over a wide range of thicknesses in epitaxial ferrimagnetic insulator Eu3Fe5O12 (EuIG) and Tb3Fe5O12 (TbIG) thin films grown by pulsed-laser deposition on Gd3Ga5O12 with (001) and (111) orientations, respectively. The PMA field is determined by measuring the induced anomalous Hall loops in Pt deposited on the garnet films. Due to positive magnetostriction constants, compressive in-plane strain induces a PMA field as large as 32.9 kOe for 4 nm thick EuIG and 66.7 kOe for 5 nm thick TbIG at 300 K, and relaxes extremely slowly as the garnet film thickness increases. In bilayers consisting of Pt and EuIG or Pt and TbIG, robust PMA is revealed by squared anomalous Hall hysteresis loops in Pt, the magnitude of which appears to be only related to the net magnetic moment of iron sublattices. Furthermore, the magnetostriction constant is found to be 2.7x10^(-5) for EuIG and 1.35x10^(-5) for TbIG, comparable with the values for bulk crystals. Our results demonstrate a general approach of tailoring magnetic anisotropy of rare earth iron garnets by utilizing modulated strain via epitaxial growth.
Magnetite epitaxial thin films have been prepared by pulsed laser deposition at 340 C on MgO and Si substrates. One key result is that the thin film properties are almost identical to the properties of bulk material. For 40 - 50 nm thick films, the saturation magnetization and conductivity are respectively 453 emu/cm^3 and 225 1/(Ohm cm) at room temperature. The Verwey transition is at 117 K. The Hall effect indicates an electron concentration corresponding to 0.22 electrons per formula unit at room temperature. Normal and anomalous Hall effect both have a negative sign.
We investigated the crystal and electronic structures of ferroelectric Bi4Ti3O12 (BiT) single crystalline thin films site-specifically substituted with LaCoO3 (LCO). The epitaxial films were grown by pulsed laser epitaxy on NdGaO3 and SrTiO3 substrates to vary the degree of strain. With increasing the LCO substitution, we observed a systematic increase in the c-axis lattice constant of the Aurivillius phase related with the modification of pseudo-orthorhombic unit cells. These compositional and structural changes resulted in a systematic decrease in the band gap, i.e., the optical transition energy between the oxygen 2p and transition metal 3d states, based on a spectroscopic ellipsometry study. In particular, the Co 3d state seems to largely overlap with the Ti t2g state, decreasing the band gap. Interestingly, the applied tensile strain facilitates the band gap narrowing, demonstrating that epitaxial strain is a useful tool to tune the electronic structure of ferroelectric transition metal oxides.
Berry curvature plays a crucial role in exotic electronic states of quantum materials, such as intrinsic anomalous Hall effect. As Berry curvature is highly sensitive to subtle changes of electronic band structures, it can be finely tuned via external stimulus. Here, we demonstrate in SrRuO3 thin films that both the magnitude and sign of anomalous Hall resistivity can be effectively controlled with epitaxial strain. Our first-principles calculations reveal that epitaxial strain induces an additional crystal field splitting and changes the order of Ru d orbital energies, which alters the Berry curvature and leads to the sign and magnitude change of anomalous Hall conductivity. Furthermore, we show that the rotation of Ru magnetic moment in real space of tensile strained sample can result in an exotic nonmonotonic change of anomalous Hall resistivity with the sweeping of magnetic field, resembling the topological Hall effect observed in non-coplanar spin systems. These findings not only deepen our understanding of anomalous Hall effect in SrRuO3 systems, but also provide an effective tuning knob to manipulate Berry curvature and related physical properties in a wide range of quantum materials.