Electron Spin Decoherence in Silicon Carbide Nuclear Spin Bath

In this paper, we study the electron spin decoherence of single defects in silicon carbide (SiC) nuclear spin bath. We find that, although the natural abundance of $^{29}rm{Si}$ ($p_{rm{Si}}=4.7%$) is about 4 times larger than that of $^{13}{rm C}$ ($p_{rm{C}}=1.1%$), the electron spin coherence time of defect centers in SiC nuclear spin bath in strong magnetic field ($B>300~rm{Gauss}$) is longer than that of nitrogen-vacancy (NV) centers in $^{13}{rm C}$ nuclear spin bath in diamond. The reason for this counter-intuitive result is the suppression of heteronuclear-spin flip-flop process in finite magnetic field. Our results show that electron spin of defect centers in SiC are excellent candidates for solid state spin qubit in quantum information processing.