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Register a new userElectronic reconstruction at the interface between band insulating oxides: the LaAlO3/SrTiO3 system
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Authors
M. Salluzzo
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The conducting quasi-two dimensional electron system (q2DES) formed at the interface between LaAlO3 and SrTiO3 band insulators is confronting the condensed matter physics community with new paradigms. While the mechanism for the formation of the q2DES is debated, new conducting interfaces have been discovered paving the way to possible applications in electronics, spintronics and optoelectronics. This chapter is an overview of the research on the LAO/STO sys-tem, presenting some of the most important results obtained in the last decade to clarify the mechanism of formation of the q2DES at the oxide interfaces and its peculiar electronic properties as compared to semiconducting 2D-electron gas.
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We show that the growth of the heterostructure LaGaO3/SrTiO3 yields the formation of a highly conductive interface. Our samples were carefully analyzed by high resolution electron microscopy, in order to assess their crystal perfection and to evaluate the abruptness of the interface. Their carrier density and sheet resistance are compared to the case of LaAlO3/SrTiO3 and a superconducting transition is found. The results open the route to widening the field of polar-non polar interfaces, pose some phenomenological constrains to their underlying physics and highlight the chance of tailoring their properties for future applications by adopting suitable polar materials.
When insulator LaAlO3 is grown by epitaxy onto a TiO2-terminated {100} surface of insulator SrTiO3, the resulting system has a metallic character. This phenomenon has been associated with an electrostatic frustration at the interface, as {100} surfaces of SrTiO3 are neutral while those of LaAlO3 are polar, but its microscopic mechanism is not quite understood. Here, we present a structural characterisation of this interface by aberration-corrected transmission electron microscopy. The unit cells at the interface appear elongated: we discuss this distortion in terms of electrostatic charge and extra carriers at the interface.
Conventional two-dimensional electron gases are realized by engineering the interfaces between semiconducting compounds. In 2004, Ohtomo and Hwang discovered that an electron gas can be also realized at the interface between large gap insulators made of transition metal oxides [1]. This finding has generated considerable efforts to clarify the underlying microscopic mechanism. Of particular interest is the LaAlO3/SrTiO3 system, because it features especially striking properties. High carrier mobility [1], electric field tuneable superconductivity [2] and magnetic effects [3], have been found. Here we show that an orbital reconstruction is underlying the generation of the electron gas at the LaAlO3/SrTiO3 n-type interface. Our results are based on extensive investigations of the electronic properties and of the orbital structure of the interface using X-ray Absorption Spectroscopy. In particular we find that the degeneracy of the Ti 3d states is fully removed, and that the Ti 3dxy levels become the first available states for conducting electrons.
At interfaces between complex oxides it is possible to generate electronic systems with unusual electronic properties, which are not present in the isolated oxides. One important example is the appearance of superconductivity at the interface between insulating oxides, although, until now, with very low Tc. We report the occurrence of high Tc superconductivity in the bilayer CaCuO2/SrTiO3, where both the constituent oxides are insulating. In order to obtain a superconducting state, the CaCuO2/SrTiO3 interface must be realized between the Ca plane of CaCuO2 and the TiO2 plane of SrTiO3. Only in this case extra oxygen ions can be incorporated in the interface Ca plane, acting as apical oxygen for Cu and providing holes to the CuO2 planes. A detailed hole doping spatial profile has been obtained by STEM/EELS at the O K-edge, clearly showing that the (super)conductivity is confined to about 1-2 CaCuO2 unit cells close to the interface with SrTiO3. The results obtained for the CaCuO2/SrTiO3 interface can be extended to multilayered high Tc cuprates, contributing to explain the dependence of Tc on the number of CuO2 planes in these systems.
Interplay of spin, charge, orbital and lattice degrees of freedom in oxide heterostructures results in a plethora of fascinating properties, which can be exploited in new generations of electronic devices with enhanced functionalities. The paradigm example is the interface between the two band insulators LaAlO3 and SrTiO3 (LAO/STO) that hosts two-dimensional electron system (2DES). Apart from the mobile charge carriers, this system exhibits a range of intriguing properties such as field effect, superconductivity and ferromagnetism, whose fundamental origins are still debated. Here, we use soft-X-ray angle-resolved photoelectron spectroscopy to penetrate through the LAO overlayer and access charge carriers at the buried interface. The experimental spectral function directly identifies the interface charge carriers as large polarons, emerging from coupling of charge and lattice degrees of freedom, and involving two phonons of different energy and thermal activity. This phenomenon fundamentally limits the carrier mobility and explains its puzzling drop at high temperatures.
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