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Localised Wannier orbital basis for the Mott insulators GaV4S8 and GaTa4Se8

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 Added by Alberto Camjayi
 Publication date 2014
  fields Physics
and research's language is English




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We study the electronic properties of GaV4S8 (GVS) and GaTaSe8 (GTS), two distant members within the large family of chalcogenides AM4X8, with A={Ga, Ge}, M={V, Nb, Ta, Mo} and X={S, Se}. While all these compounds are Mott insulators, their ground state show many types of magnetic order, with GVS being ferromagnetic and GTS non-magnetic. Based on their bandstructures, calculated with Density Functional Theory methods, we compute an effective tight binding Hamiltonian in a localised Wannier basis set, for each one of the two compounds. The localised orbitals provide a very accurate representation of the bandstructure, with hopping amplitudes that rapidly decrease with distance. We estimate the super-exchange interactions and show that the Coulomb repulsion with the Hunds coupling may account the for the different ground states observed in GVS and GTS. Our localised Wannier basis provides a starting point for realistic Dynamical Mean Field Theory studies of strong correlation effects in this family compounds.



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We present the results of the magnetic and specific heat measurements on V4 tetrahedral-cluster compound GaV4S8 between 2 to 300K. We find two transitions related to a structural change at 42K followed by ferromagnetic order at 12K on cooling. Remarkably similar properties were previously reported for the cluster compounds of Mo4. These compounds show an extremely high density of low energy excitations in their electronic properties. We explain this behavior in a cluster compound as due to the reduction of coulomb repulsion among electrons that occupy highly degenerate orbits of different clusters.
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