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Register a new userResistive switching in ultra-thin La0.7Sr0.3MnO3 / SrRuO3 superlattices
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Surya Narayana jammalamadaka
Publication date
2014
fields
Physics
and research's language is
English
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Superlattices may play an important role in next generation electronic and spintronic devices if the key-challenge of the reading and writing data can be solved. This challenge emerges from the coupling of low dimensional individual layers with macroscopic world. Here we report the study of the resistive switching characteristics of a of hybrid structure made out of a superlattice with ultrathin layers of two ferromagnetic metallic oxides, La0.7Sr0.3MnO3 (LSMO) and SrRuO3 (SRO). Bipolar resistive switching memory effects are measured on these LSMO/SRO superlattices, and the observed switching is explainable by ohmic and space charge-limited conduction laws. It is evident from the endurance characteristics that the on/off memory window of the cell is greater than 14, which indicates that this cell can reliably distinguish the stored information between high and low resistance states. The findings may pave a way to the construction of devices based on nonvolatile resistive memory effects.
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Magnetic properties of a series of (La0.7Sr0.3MnO3/SrRuO3) superlattices, where the SrRuO3 layer thickness is varying, are examined. A room-temperature magnetocaloric effect is obtained owing to the finite size effect which reduces the TC of La0.7Sr0.3MnO3 layers. While the working temperature ranges are enlarged,, -DeltaSmax values remains similar to the values in polycrystalline La0.7Sr0.3MnO3. Consequently, the relative cooling powers are significantly improved, the microscopic mechanism of which is related to the effect of the interfaces at La0.7Sr0.3MnO3/SrRuO3 and higher nanostructural disorder. This study indicates that artificial oxide superlattices/multilayers might provide an alternative pathway in searching for efficient room-temperature magnetic refrigerators for (nano)microscale systems.
Exchange bias (EB) and the training effects (TE) in an antiferromagnetically coupled La0.7Sr0.3MnO3 / SrRuO3 superlattices were studied in the temperature range 1.8 - 150 K. Strong antiferromagnetic (AFM) interlayer coupling is evidenced from AC - susceptibility measurements. Below 100 K, vertical magnetization shifts are present due to the two remanent states corresponding to the two ferromagnetic (FM) layers at FM and AFM coupling condition. After field cooling (FC), significant decrease in the exchange bias field (HEB) is observed when cycling the system through several consecutive hysteresis loops. Quantitative analysis for the variation of HEB vs. number of field cycles (n) indicates an excellent agreement between the theory, based on triggered relaxation phenomena, and our experimental observations. Nevertheless, the crucial fitting parameter K indicates smooth training effect upon repeated field cycling, in accordance with our observation.
We have investigated the magnetic response of La0.7Sr0.3MnO3/SrRuO3 superlattices to biaxial in-plane strain applied in-situ. Superlattices grown on piezoelectric substrates of 0.72PbMg1/3Nb2/3O3-0.28PbTiO3(001) (PMN-PT) show strong antiferromagnetic coupling of the two ferromagnetic components. The coupling field of mu0HAF = 2.8 T is found to decrease by deltaHAF/delta epsilon ~ -520 mT %-1 under reversible biaxial strain mu0HAF at 80 K in a [La0.7Sr0.3MnO3(22)/SrRuO3(55)]15 superlattice. This reveals a significant strain effect on interfacial coupling. The applied in-plane compression enhances the ferromagnetic order in the manganite layers which are under as-grown tensile strain. It is thus difficult to disentangle the contributions from strain-dependent antiferromagnetic Mn-O-Ru interface coupling and Mn-O-Mn ferromagnetic double exchange near the interface, since the enhanced magnetic order of Mn spins leads to a larger net coupling of SrRuO3 layers at the interface. Strain-dependent orbital occupation in a single-ion picture cannot explain the sign of the observed strain dependence, whereas the enhanced Mn order at the interface is qualitatively in line with it.
Metallic oxides encased within Metal-Insulator-Metal (MIM) structures can demonstrate both unipolar and bipolar switching mechanisms, rendering them the capability to exhibit a multitude of resistive states and ultimately function as memory elements. Identifying the vital physical mechanisms behind resistive switching can enable these devices to be utilized more efficiently, reliably and in the long-term. In this paper, we present a new approach for analysing resistive switching by modelling the active core of two terminal devices as 2D and 3D grid circuit breaker networks. This model is employed to demonstrate that substantial resistive switching can only be supported by the formation of continuous current percolation channels, while multi-state capacity is ascribed to the establishment and annihilation of multiple channels.
Nanoscale 3D surface modifications, by scanning tunneling microscopy under ambient conditions, of La0.7Sr0.3MnO3 thin films have been performed. It was demonstrated that there are well defined combinations of bias voltages and scan speeds which allow for controlled surface structuring. Lateral structures with sizes down to 1.5 nm are possible to obtain. Moreover, it is possible to reproducibly control the depth of etching with half a unit cell precision, enabling design of 3D surface structures and control of the surface termination of La0.7Sr0.3MnO3 through etching.
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