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Register a new userScalable Tight-Binding Model for Graphene
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Artificial graphene consisting of honeycomb lattices other than the atomic layer of carbon has been shown to exhibit electronic properties similar to real graphene. Here, we reverse the argument to show that transport properties of real graphene can be captured by simulations using theoretical artificial graphene. To prove this, we first derive a simple condition, along with its restrictions, to achieve band structure invariance for a scalable graphene lattice. We then present transport measurements for an ultraclean suspended single-layer graphene pn junction device, where ballistic transport features from complex Fabry-Perot interference (at zero magnetic field) to the quantum Hall effect (at unusually low field) are observed and are well reproduced by transport simulations based on properly scaled single-particle tight-binding models. Our findings indicate that transport simulations for graphene can be efficiently performed with a strongly reduced number of atomic sites, allowing for reliable predictions for electric properties of complex graphene devices. We demonstrate the capability of the model by applying it to predict so-far unexplored gate-defined conductance quantization in single-layer graphene.
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In this work we present a tight-binding model that allows to describe with a minimal amount of parameters the band structure of exciton-polariton lattices. This model based on $s$ and $p$ non-orthogonal photonic orbitals faithfully reproduces experimental results reported for polariton graphene ribbons. We analyze in particular the influence of the non-orthogonality, the inter-orbitals interaction and the photonic spin-orbit coupling on the polarization and dispersion of bulk bands and edge states.
Experiments on hexagonal graphene-like structures using microwave measuring techniques are presented. The lowest transverse-electric resonance of coupled dielectric disks sandwiched between two metallic plates establishes a tight-binding configuration. The nearest-neighbor coupling approximation is investigated in systems with few disks. Taking advantage of the high flexibility of the disks positions, consequences of the disorder introduced in the graphene lattice on the Dirac points are investigated. Using two different types of disks, a boron-nitride-like structure (a hexagonal lattice with a two-atom basis) is implemented, showing the appearance of a band gap.
Graphene has proven to host outstanding mesoscopic effects involving massless Dirac quasiparticles travelling ballistically resulting in the current flow exhibiting light-like behaviour. A new branch of 2D electronics inspired by the standard principles of optics is rapidly evolving, calling for a deeper understanding of transport in large-scale devices at a quantum level. Here we perform large-scale quantum transport calculations based on a tight-binding model of graphene and the non-equilibrium Greens function method and include the effects of $p-n$ junctions of different shape, magnetic field, and absorptive regions acting as drains for current. We stress the importance of choosing absorbing boundary conditions in the calculations to correctly capture how current flows in the limit of infinite devices. As a specific application we present a fully quantum-mechanical framework for the 2D Dirac fermion microscope recently proposed by B{o}ggild $et, al.$ [Nat. Comm. 8, 10.1038 (2017)], tackling several key electron-optical effects therein predicted via semiclassical trajectory simulations, such as electron beam collimation, deflection and scattering off Veselago dots. Our results confirm that a semiclassical approach to a large extend is sufficient to capture the main transport features in the mesoscopic limit and the optical regime, but also that a richer electron-optical landscape is to be expected when coherence or other purely quantum effects are accounted for in the simulations.
We present the symmetry labelling of all electron bands in graphene obtained by combining numerical band calculations and analytical analysis based on group theory. The latter was performed both in the framework of the (nearly) free electron model, or in the framework of the tight-binding model. The predictions about relative positions of the bands which can be made on the basis of each of the models just using the group theory (and additional simple qualitative arguments, if necessary) are complimentary.
We propose atomic films of n-doped $gamma$-InSe as a platform for intersubband optics in the infrared (IR) and far infrared (FIR) range, coupled to out-of-plane polarized light. Depending on the film thickness (number of layers) of the InSe film these transitions span from $sim 0.7$ eV for bilayer to $sim 0.05$ eV for 15-layer InSe. We use a hybrid $mathbf{k} cdot mathbf{p}$ theory and tight-binding model, fully parametrized using density functional theory, to predict their oscillator strengths and thermal linewidths at room temperature.
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