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Register a new userMeasurement Of Quasiparticle Transport In Aluminum Films Using Tungsten Transition-Edge Sensors
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We report new experimental studies to understand the physics of phonon sensors which utilize quasiparticle diffusion in thin aluminum films into tungsten transition-edge-sensors (TESs) operated at 35 mK. We show that basic TES physics and a simple physical model of the overlap region between the W and Al films in our devices enables us to accurately reproduce the experimentally observed pulse shapes from x-rays absorbed in the Al films. We further estimate quasiparticle loss in Al films using a simple diffusion equation approach.
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We report initial measurements on our firstMoAu Transition Edge Sensors (TESs). The TESs formed from a bilayer of 40 nm of Mo and 106 nm of Au showed transition temperatures of about 320 mK, higher than identical TESs with a MoCu bilayer which is consistent with a reduced electron transmission coefficient between the bilayer films. We report measurements of thermal conductance in the 200 nm thick silicon nitride SiNx support structures at this temperature, TES dynamic behaviour and current noise measurements.
We show the proof-of-principle detection of light at 1550 nm coupled evanescently from a titanium in-diffused lithium niobate waveguide to a superconducting transition edge sensor. The coupling efficiency strongly depends on the polarization, the overlap between the evanescent field, and the detector structure. We experimentally demonstrate polarization sensitivity of this coupling as well as photon-number resolution of the integrated detector. The combination of transition edge sensors and lithium niobate waveguides can open the field for a variety of new quantum optics experiments.
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A method is presented which allows to obtain the position-dependent electric field and charge density by fits to velocity profiles from edge-TCT data from silicon strip-detectors. The validity and the limitations of the method are investigated by simulations of non-irradiated $n^+p$ pad sensors and by the analysis of edge-TCT data from non-irradiated $n^+p$ strip-detectors. The method is then used to determine the position dependent electric field and charge density in $n^+p$ strip detectors irradiated by reactor neutrons to fluences between 1 and $10 times 10^{15}$ cm$^{-2}$ for forward-bias voltages between 25 V and up to 550 V and for reverse-bias voltages between 50 V and 800 V. In all cases the velocity profiles are well described. The electric fields and charge densities determined provide quantitative insights into the effects of radiation damage for silicon sensors by reactor neutrons.
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