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Register a new userTwo-parameter scaling theory of transport near a spectral node
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We investigate the finite-size scaling behavior of the conductivity in a two-dimensional Dirac electron gas within a chiral sigma model. Based on the fact that the conductivity is a function of system size times scattering rate, we obtain a two-parameter scaling flow toward a finite fixed point. The latter is the minimal conductivity of the infinite system. Depending on boundary conditions, we also observe unstable fixed points with conductivities much larger than the experimentally observed values, which may account for results found in some numerical simulations. By including a spectral gap we extend our scaling approach to describe a metal-insulator transition.
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We explore the scaling description for a two-dimensional metal-insulator transition (MIT) of electrons in silicon. Near the MIT, $beta_{T}/p = (-1/p)d(ln g)/d(ln T)$ is universal (with $p$, a sample dependent exponent, determined separately; $g$--conductance, $T$--temperature). We obtain the characteristic temperatures $T_0$ and $T_1$ demarking respectively the quantum critical region and the regime of validity of single parameter scaling in the metallic phase, and show that $T_1$ vanishes as the transition is approached. For $T<T_1$, the scaling of the data requires a second parameter. Moreover, all of the data can be described with two-parameter scaling at all densities -- even far from the transition.
A two parameter percolation model with nucleation and growth of finite clusters is developed taking the initial seed concentration rho and a growth parameter g as two tunable parameters. Percolation transition is determined by the final static configuration of spanning clusters. A finite size scaling theory for such transition is developed and numerically verified. The scaling functions are found to depend on both g and rho. The singularities at the critical growth probability gc of a given rho are described by appropriate critical exponents. The values of the critical exponents are found to be same as that of the original percolation at all values of rho at the respective gc . The model then belongs to the same universality class of percolation for the whole range of rho.
We use microscopic linear response theory to derive a set of equations that provide a complete description of coupled spin and charge diffusive transport in a two-dimensional electron gas (2DEG) with the Rashba spin-orbit (SO) interaction. These equations capture a number of interrelated effects including spin accumulation and diffusion, Dyakonov-Perel spin relaxation, magnetoelectric, and spin-galvanic effects. They can be used under very general circumstances to model transport experiments in 2DEG systems that involve either electrical or optical spin injection. We comment on the relationship between these equations and the exact spin and charge density operator equations of motion. As an example of the application of our equations, we consider a simple electrical spin injection experiment and show that a voltage will develop between two ferromagnetic contacts if a spin-polarized current is injected into a 2DEG, that depends on the relative magnetization orientation of the contacts. This voltage is present even when the separation between the contacts is larger than the spin diffusion length.
We develop an Effective Medium Theory to study the electrical transport properties of disordered graphene. The theory includes non-linear screening and exchange-correlation effects allowing us to consider experimentally relevant strengths of the Coulomb interaction. Assuming random Coulomb impurities, we calculate the electrical conductivity as a function of gate voltage describing quantitatively the full cross-over from the fluctuations dominated regime around the Dirac point to the large doping regime at high gate voltages. We find that the conductivity at the Dirac point is strongly affected by exchange correlation effects.
Using evolutionary algorithm and first-principles calculations, we predict a family group of two-dimensional node-line semimetals MX (M=Pd, Pt; X=S, Se, Te), which has zig-zag type mono-layer structure in Pmm2 layer group. Band structure analysis reveals that node-line features are caused by band inversion and the inversion exists even in the absence of spin-orbital-coupling. Tests are carried out to confirm that the node-line loop is protected by crystal symmetry. This work extends our knowledge of node-line materials to two-dimensional cases, i.e., a group of metal-group VI compounds sharing the same lattice structure which has time reversion and crystal-mirror inversion symmetries.
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