No Arabic abstract
We show that in crystals where light ions are symmetrically intercalated between heavy ions, the electron-phonon coupling for carriers located at the light sites cannot be described by a Holstein model. We introduce the double-well electron-phonon coupling model to describe the most interesting parameter regime in such systems, and study it in the single carrier limit using the momentum average approximation. For sufficiently strong coupling, a small polaron with a robust phonon cloud appears at low energies. While some of its properties are similar to those of a Holstein polaron, we highlight some crucial differences. These prove that the physics of the double-well electron-phonon coupling model cannot be reproduced with a linear Holstein model.
We use the Momentum Average approximation (MA) to study the ground-state properties of strongly bound bipolarons in the double-well electron-phonon (el-ph) coupling model, which describes certain intercalated lattices where the linear term in the el-ph coupling vanishes due tosymmetry. We show that this model predicts the existence of strongly bound yet lightweight bipolarons in some regions of the parameter space. This provides a novel mechanism for the appearance of such bipolarons, in addition to long-range el-ph coupling and special lattice geometries.
Understanding the physics of strongly correlated electronic systems has been a central issue in condensed matter physics for decades. In transition metal oxides, strong correlations characteristic of narrow $d$ bands is at the origin of such remarkable properties as the Mott gap opening, enhanced effective mass, and anomalous vibronic coupling, to mention a few. SrVO$_3$, with V$^{4+}$ in a $3d^1$ electronic configuration is the simplest example of a 3D correlated metallic electronic system. Here, we focus on the observation of a (roughly) quadratic temperature dependence of the inverse electron mobility of this seemingly simple system, which is an intriguing property shared by other metallic oxides. The systematic analysis of electronic transport in SrVO$_3$ thin films discloses the limitations of the simplest picture of e-e correlations in a Fermi liquid; instead, we show that the quasi-2D topology of the Fermi surface and a strong electron-phonon coupling, contributing to dress carriers with a phonon cloud, play a pivotal role on the reported electron spectroscopic, optical, thermodynamic and transport data. The picture that emerges is not restricted to SrVO$_3$ but can be shared with other $3d$ and $4d$ metallic oxides.
Antiferromagnetism (AF) such as Neel ordering is often closely related to Coulomb interactions such as Hubbard repulsion in two-dimensional (2D) systems. Whether Neel AF ordering in 2D can be dominantly induced by electron-phonon couplings (EPC) has not been completely understood. Here, by employing numerically-exact sign-problem-free quantum Monte Carlo (QMC) simulations, we show that optical Su-Schrieffer-Heeger (SSH) phonons with frequency $omega$ and EPC constant $lambda$ can induce AF ordering for a wide range of phonon frequency $omega>omega_c$. For $omega<omega_c$, a valence-bond-solid (VBS) order appears and there is a direct quantum phase transition between VBS and AF phases at $omega_c$. The phonon mechanism of the AF ordering is related to the fact that SSH phonons directly couple to electron hopping whose second-order process can induce an effective AF spin exchange. Our results shall shed new lights to understanding AF ordering in correlated quantum materials.
We employ time-resolved resonant x-ray diffraction to study the melting of charge order and the associated insulator-metal transition in the doped manganite Pr$_{0.5}$Ca$_{0.5}$MnO$_3$ after resonant excitation of a high-frequency infrared-active lattice mode. We find that the charge order reduces promptly and highly nonlinearly as function of excitation fluence. Density functional theory calculations suggest that direct anharmonic coupling between the excited lattice mode and the electronic structure drive these dynamics, highlighting a new avenue of nonlinear phonon control.
The effects of various transition metal dopants on the electrical and thermal transport properties of Fe1-xMxSi alloys (M= Co, Ir, Os) are reported. The maximum thermoelectric figure of merit ZTmax is improved from 0.007 at 60 K for pure FeSi to ZT = 0.08 at 100 K for 4% Ir doping. A comparison of the thermal conductivity data among Os, Ir and Co doped alloys indicates strong electron-phonon coupling in this compound. Because of this interaction, the common approximation of dividing the total thermal conductivity into independent electronic and lattice components ({kappa}Total = {kappa}electronic + {kappa}lattice) fails for these alloys. The effects of grain size on thermoelectric properties of Fe0.96Ir0.04Si alloys are also reported. The thermal conductivity can be lowered by about 50% with little or no effect on the electrical resistivity or Seebeck coefficient. This results in ZTmax = 0.125 at 100 K, still about a factor of five too low for solid-state refrigeration applications.