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Register a new userMerging of Landau levels in a strongly-interacting two-dimensional electron system in silicon
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We show that the merging of the spin- and valley-split Landau levels at the chemical potential is an intrinsic property of a strongly-interacting two-dimensional electron system in silicon. Evidence for the level merging is given by available experimental data.
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We present thermal and electrical transport measurements of low-density (10$^{14}$ m$^{-2}$), mesoscopic two-dimensional electron systems (2DESs) in GaAs/AlGaAs heterostructures at sub-Kelvin temperatures. We find that even in the supposedly strongly localised regime, where the electrical resistivity of the system is two orders of magnitude greater than the quantum of resistance $h/e^2$, the thermopower decreases linearly with temperature indicating metallicity. Remarkably, the magnitude of the thermopower exceeds the predicted value in non-interacting metallic 2DESs at similar carrier densities by over two orders of magnitude. Our results indicate a new quantum state and possibly a novel class of itinerant quasiparticles in dilute 2DESs at low temperatures where the Coulomb interaction plays a pivotal role.
We show that the disappearance of the chemical potential jumps over the range of perpendicular magnetic fields at fixed integer filling factor in a double quantum well with a tunnel barrier is caused by the interaction-induced level merging. The distribution function in the merging regime is special in that the probability to find an electron with energy equal to the chemical potential is different for the two merged levels.
Large fluctuations of conductivity with time are observed in a low-mobility two-dimensional electron system in silicon at low electron densities $n_s$ and temperatures. A dramatic increase of the noise power ($propto 1/f^{alpha}$) as $n_s$ is reduced below a certain density $n_g$, and a sharp jump of $alpha$ at $n_sapprox n_g$, are attributed to the freezing of the electron glass at $n_s = n_g$. The data strongly suggest that glassy dynamics persists in the metallic phase.
The relaxations of conductivity have been studied in a strongly disordered two-dimensional (2D) electron system in Si after excitation far from equilibrium by a rapid change of carrier density n_s at low temperatures T. The dramatic and precise dependence of the relaxations on n_s and T strongly suggests (a) the transition to a glassy phase as T->0, and (b) the Coulomb interactions between 2D electrons play a dominant role in the observed out-of-equilibrium dynamics.
We report experimental evidence of a remarkable spontaneous time reversal symmetry breaking in two dimensional electron systems formed by atomically confined doping of phosphorus (P) atoms inside bulk crystalline silicon (Si) and germanium (Ge). Weak localization corrections to the conductivity and the universal conductance fluctuations were both found to decrease rapidly with decreasing doping in the Si:P and Ge:P $delta-$layers, suggesting an effect driven by Coulomb interactions. In-plane magnetotransport measurements indicate the presence of intrinsic local spin fluctuations at low doping, providing a microscopic mechanism for spontaneous lifting of the time reversal symmetry. Our experiments suggest the emergence of a new many-body quantum state when two dimensional electrons are confined to narrow half-filled impurity bands.
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