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Register a new userThe malleability of uranium: manipulating the charge-density wave in epitaxial films
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We report x-ray synchrotron experiments on epitaxial films of uranium, deposited on niobium and tungsten seed layers. Despite similar lattice parameters for these refractory metals, the uranium epitaxial arrangements are different and the strains propagated along the a-axis of the uranium layers are of opposite sign. At low temperatures these changes in epitaxy result in dramatic modifications to the behavior of the charge-density wave in uranium. The differences are explained with the current theory for the electron-phonon coupling in the uranium lattice. Our results emphasize the intriguing possibilities of producing epitaxial films of elements that have complex structures like the light actinides uranium to plutonium.
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The transition metal dichalcogenide (TMD) $1T$-TaS$_{2}$ exhibits a rich set of charge density wave (CDW) orders. Recent investigations suggested that using light or electric field can manipulate the commensurate (C) CDW ground state. Such manipulations are considered to be determined by the charge carrier doping. Here we simulate by first-principles calculations the carrier doping effect on CCDW in $1T$-TaS$_{2}$. We investigate the charge doping effects on the electronic structures and phonon instabilities of $1T$ structure and analyze the doping induced energy and distortion ratio variations in CCDW structure. We found that both in bulk and monolayer $1T$-TaS$_{2}$, CCDW is stable upon electron doping, while hole doping can significantly suppress the CCDW, implying different mechanisms of such reported manipulations. Light or positive perpendicular electric field induced hole doping increases the energy of CCDW, so that the system transforms to NCCDW or similar metastable state. On the other hand, even the CCDW distortion is more stable upon in-plain electric field induced electron injection, some accompanied effects can drive the system to cross over the energy barrier from CCDW to nearly commensurate (NC) CDW or similar metastable state. We also estimate that hole doping can introduce potential superconductivity with $T_{c}$ of $6sim7$ K. Controllable switching of different states such as CCDW/Mott insulating state, metallic state, and even the superconducting state can be realized in $1T$-TaS$_{2}$, which makes the novel material have very promising applications in the future electronic devices.
The so-called stripe phase of the manganites is an important example of the complex behaviour of metal oxides, and has long been interpreted as the localisation of charge at atomic sites. Here, we demonstrate via resistance measurements on La_{0.50}Ca_{0.50}MnO_3 that this state is in fact a prototypical charge density wave (CDW) which undergoes collective transport. Dramatic resistance hysteresis effects and broadband noise properties are observed, both of which are typical of sliding CDW systems. Moreover, the high levels of disorder typical of manganites result in behaviour similar to that of well-known disordered CDW materials. Our discovery that the manganite superstructure is a CDW shows that unusual transport and structural properties do not require exotic physics, but can emerge when a well-understood phase (the CDW) coexists with disorder.
In the optical conductivity of four different manganites with commensurate charge order (CO), strong peaks appear in the meV range below the ordering temperature T_{CO}. They are similar to those reported for one-dimensional charge density waves (CDW) and are assigned to pinned phasons. The peaks and their overtones allow one to obtain, for La{1-n/8}Ca{n/8}$MnO{3} with n = 5, 6, the electron-phonon coupling, the effective mass of the CO system, and its contribution to the dielectric constant. These results support a description of the CO in La-Ca manganites in terms of moderately weak-coupling and of the CDW theory.
Impurity pinning has long been discussed to have a profound effect on the dynamics of an incommensurate charge density wave (CDW), which would otherwise slide through the lattice without resistance. Here we visualize the impurity pinning evolution of the CDW in ZrTe3 using the variable temperature scanning tunneling microscopy (STM). At low temperatures, we observe a quasi-1D incommensurate CDW modulation moderately correlated to the impurity positions, indicating a weak impurity pinning. As we raise the sample temperature, the CDW modulation gets progressively weakened and distorted, while the correlation with the impurities becomes stronger. Above the CDW transition temperature, short-range modulations persist with the phase almost all pinned by impurities. The evolution from weak to strong impurity pinning through the CDW transition can be understood as a result of losing phase rigidity.
Charge density waves in transition metal dichalcogenides have been intensively studied for their close correlation with Mott insulator, charge-transfer insulator, and superconductor. VTe2 monolayer recently comes into sight because of its prominent electron correlations and the mysterious origin of CDW orders. As a metal of more than one type of charge density waves, it involves complicated electron-electron and electron-phonon interactions. Through a scanning tunneling microscopy study, we observed triple-Q 4-by-4 and single-Q 4-by-1 modulations with significant charge and orbital separation. The triple-Q 4-by-4 order arises strongly from the p-d hybridized states, resulting in a charge distribution in agreement with the V-atom clustering model. Associated with a lower Fermi level, the local single-Q 4-by-1 electronic pattern is generated with the p-d hybridized states remaining 4-by-4 ordered. In the spectroscopic study, orbital- and atomic- selective charge-density-wave gaps with the size up to ~400 meV were resolved on the atomic scale.
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