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Register a new userValley-antisymmetric potential in graphene under dynamical deformation
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When graphene is deformed in a dynamical manner, a time-dependent potential is induced for the electrons. The potential is antisymmetric with respect to valleys, and some straightforward applications are found for Raman spectroscopy. We show that a valley-antisymmetric potential broadens Raman $D$ band but does not affect $2D$ band, which is already observed by recent experiments. The space derivative of the valley antisymmetric potential gives a force field that accelerates intervalley phonons, while it corresponds to the longitudinal component of the previously discussed pseudoelectric field acting on the electrons. Effects of a pseudoelectric field on the electron is quite difficult to observe due to the valley-antisymmetric coupling constant, on the other hand, such obstacle is absent for intervalley phonons with $A_{1g}$ symmetry that constitute the $D$ and $2D$ bands.
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The electron transport of different conical valleys is investigated in graphene with extended line-defects. Intriguingly, the electron with a definite incident angle can be completely modulated into one conical valley by a resonator which consists of several paralleling line-defects. The related incident angle can be controlled easily by tuning the parameters of the resonator. Therefore, a controllable 100% valley polarization, as well as the detection of the valley polarization, can be realized conveniently by tuning the number of line-defects and the distance between two nearest neighbouring line-defects. This fascinating finding opens a way to realize the valley polarization by line-defects. With the advancement of experimental technologies, this resonator is promising to be realized and thus plays a key role in graphene valleytronics.
The valley degeneracy of electron states in graphene stimulates intensive research of valley-related optical and transport phenomena. While many proposals on how to manipulate valley states have been put forward, experimental access to the valley polarization in graphene is still a challenge. Here, we develop a theory of the second optical harmonic generation in graphene and show that this effect can be used to measure the degree and sign of the valley polarization. We show that, at the normal incidence of radiation, the second harmonic generation stems from imbalance of carrier populations in the valleys. The effect has a specific polarization dependence reflecting the trigonal symmetry of electron valley and is resonantly enhanced if the energy of incident photons is close to the Fermi energy.
In twisted bilayer graphene (TBG) a moire pattern forms that introduces a new length scale to the material. At the magic twist angle of 1.1{deg}, this causes a flat band to form, yielding emergent properties such as correlated insulator behavior and superconductivity [1-4]. In general, the moire structure in TBG varies spatially, influencing the local electronic properties [5-9] and hence the outcome of macroscopic charge transport experiments. In particular, to understand the wide variety observed in the phase diagrams and critical temperatures, a more detailed understanding of the local moire variation is needed [10]. Here, we study spatial and temporal variations of the moire pattern in TBG using aberration-corrected Low Energy Electron Microscopy (AC-LEEM) [11,12]. The spatial variation we find is lower than reported previously. At 500{deg}C, we observe thermal fluctuations of the moire lattice, corresponding to collective atomic displacements of less than 70pm on a time scale of seconds [13], homogenizing the sample. Despite previous concerns, no untwisting of the layers is found, even at temperatures as high as 600{deg}C [14,15]. From these observations, we conclude that thermal annealing can be used to decrease the local disorder in TBG samples. Finally, we report the existence of individual edge dislocations in the atomic and moire lattice. These topological defects break translation symmetry and are anticipated to exhibit unique local electronic properties.
Valley polarization in graphene breaks inversion symmetry and therefore leads to second-harmonic generation. We present a complete theory of this effect within a single-particle approximation. It is shown that this may be a sensitive tool to measure the valley polarization created, e.g., by polarized light and, thus, can be used for a development of ultrafast valleytronics in graphene.
Since its discovery, Berry phase has been demonstrated to play an important role in many quantum systems. In gapped Bernal bilayer graphene, the Berry phase can be continuously tuned from zero to 2pi, which offers a unique opportunity to explore the tunable Berry phase on the physical phenomena. Here, we report experimental observation of Berry phases-induced valley splitting and crossing in moveable bilayer graphene p-n junction resonators. In our experiment, the bilayer graphene resonators are generated by combining the electric field of scanning tunneling microscope tip with the gap of bilayer graphene. A perpendicular magnetic field changes the Berry phase of the confined bound states in the resonators from zero to 2pi continuously and leads to the Berry phase difference for the two inequivalent valleys in the bilayer graphene. As a consequence, we observe giant valley splitting and unusual valley crossing of the lowest bound states. Our results indicate that the bilayer graphene resonators can be used to manipulate the valley degree of freedom in valleytronics.
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