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Tunable Fractional Quantum Hall Phases in Bilayer Graphene

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 Added by Patrick Maher
 Publication date 2014
  fields Physics
and research's language is English




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Symmetry breaking in a quantum system often leads to complex emergent behavior. In bilayer graphene (BLG), an electric field applied perpendicular to the basal plane breaks the inversion symmetry of the lattice, opening a band gap at the charge neutrality point. In a quantizing magnetic field electron interactions can cause spontaneous symmetry breaking within the spin and valley degrees of freedom, resulting in quantum Hall states (QHS) with complex order. Here we report fractional quantum Hall states (FQHS) in bilayer graphene which show phase transitions that can be tuned by a transverse electric field. This result provides a model platform to study the role of symmetry breaking in emergent states with distinct topological order.



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Electron spin and pseudospin degrees of freedom play a critical role in many-body phenomena through exchange interactions, the understanding and control of which enable the construction of states with complex topological orders and exotic excitations. In this work, we demonstrate fine control of the valley isospin in high-quality bilayer graphene devices and its profound impact in realizing fractional quantum Hall effect with different ground state orders. We present evidence for a new even-denominator fractional quantum Hall state in bilayer graphene, its spontaneous valley polarization in the limit of zero valley Zeeman energy, and the breaking of particle-hole symmetry. These observations support the Moore-Read anti-Pfaffian order. Our experiments establish valley isospin in bilayer graphene to be a powerful experimental knob and open the door to engineering non-Abelian states and quantum information processes in a quantum Hall platform.
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