Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userControlled growth of bismuth ferrite multiferroic flowers
284
0
0.0
(
0
)
Added by
Bartlomiej Andrzejewski
Publication date
2014
fields
Physics
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
This study reports on the synthesis of ball-like bismuth ferrite BiFeO3 nanoflowers by means of microwave assisted hydrothermal process and also on their composition and mechanism of growth. It turns out that the petals of the nanoflowers are composed of the nanocrystals with the size about 35-39 nm whereas their thickness and size depends on the concentration of surfactants. The petals contain BiFeO3 phase and traces of Bi2O3 oxide and metallic Bi and Fe deposited mainly at their surface. Amounts of impurity phases are more pronounced in nanoflowers synthesized during short time, and become almost negligible for longer microwave processing. The nanoflowers contain also mixed Fe valence, with the Fe2+/Fe3+ ratio depending on the time of synthesis. The growth and shape of the nanoflowers result from the process of diffusion in the initial stages of hydrothermal reaction.
rate research
Read More
We show that epitaxial (001) thin films of multiferroic bismuth ferrite BiFeO3 are monoclinic at room temperature instead of tetragonal or Rhombohedral as reported earlier . We report a orthorhombic order-disorder beta-phase between 820C and 950C contrary to the earlier report. The transition sequence monoclinic-orthorhombic phase in (001)BiFeO3 thin film (rhombohedral-orthorhombic transition in single crystal) resembles that of BaTiO3 or PbSc1/2Ta1/2O3. The transition to the cubic $gamma$-phase causes an abrupt collapse of the bandgap toward zero (insulator-metal transition) at the orthorhombic-cubic beta-gamma transition around 950C. This transition is similar to the metal-insulator transition in Ba0.6K0.4BiO3.
The process of magnetic relaxation was studied in bismuth ferrite BiFeO3 multiferroic micro-cubes obtained by means of microwave assisted Pechini process. Two different mechanisms of relaxation were found. The first one is a rapid magnetic relaxation driven by the domain reorientations and/or pinning and motion of domain walls. This mechanism is also responsible for the irreversible properties at low temperatures. The power-law decay of the magnetic moment confirms that this relaxation takes place in the system of weakly interacting ferromagnetic or superferromagnetic domains. The second mechanism is a longterm weak magnetic relaxation due to spin glass-phase.
Multiferroic bismuth ferrite (BiFeO3) nanopowders have been obtained in room temperature by mechanical synthesis. Depending on the post-synthesis processing the nanopowders have exhibited differences in the mean sizes, presence of amorphous layer and/or secondary phases. Extended magnetic study performed for fresh, annealed and hot-pressed nanopowders have revealed substantial improvement of the magnetic properties in the as-prepared powder.
There is a profound analogy between inhomogeneous magnetoelectric effect in multiferroics and flexoelectric effect in liquid crystals. This similarity gives rise to the flexomagnetoelectric polarization induced by spin modulation. The theoretical estimations of flexomagnetoelectric polarization agree with the value of jumps of polarization in magnetoelectric dependences (~20muC/m^2) observed at spin cycloid suppression at critical magnetic field 200kOe.
In this work, we report on the epitaxial growth of multiferroic YMnO3 on GaN. Both materials are hexagonal with a nominal lattice mismatch of 4%, yet x-ray diffraction reveals an unexpected 30 degree rotation between the unit cells of YMnO3 and GaN that results in a much larger lattice mismatch (10%) compared to the unrotated case. Estimates based on first principles calculations show that the bonding energy gained from the rotated atomic arrangement compensates for the increase in strain energy due to the larger lattice mismatch. Understanding the energy competition between chemical bonding energy and strain energy provides insight into the heteroepitaxial growth mechanisms of complex oxide-semiconductor systems.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
