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Register a new userEnhancement and termination of the superconducting proximity effect due to atomic-scale defects visualized by scanning tunneling microscopy
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Using low-temperature scanning tunneling microscopy and spectroscopy, we have studied the proximity effect at the interfaces between superconducting Pb island structures and metallic Pb-induced striped-incommensurate phase formed on a Si(111) substrate. Our real-space observation revealed that the step structures on the two-dimensional metallic layer exhibit significant roles on the propagation of the superconducting pair correlation; the proximity effect is terminated by the steps, and in the confined area by the interface and the steps the effect is enhanced. The observed results are explained quantitatively with an elastic reflection of electrons at the step edges based on calculations with the quasi-classical Greens function formulation using Usadel equation.
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Scanning tunneling microscope (STM) has presented a revolutionary methodology to the nanoscience and nanotechnology. It enables imaging the topography of surfaces, mapping the distribution of electronic density of states, and manipulating individual atoms and molecules, all at the atomic resolution. In particular, the atom manipulation capability has evolved from fabricating individual nanostructures towards the scalable production of the atomic-sized devices bottom-up. The combination of precision synthesis and in situ characterization of the atomically precise structures has enabled direct visualization of many quantum phenomena and fast proof-of-principle testing of quantum device functions with real-time feedback to guide the improved synthesis. In this article, several representative examples are reviewed to demonstrate the recent development of atomic scale manipulation. Especially, the review focuses on the progress that address the quantum properties by design through the precise control of the atomic structures in several technologically relevant materials systems. Besides conventional STM manipulations and electronic structure characterization with single-probe STM, integration of multiple atomically precisely controlled probes in a multiprobe STM system vastly extends the capability of in situ characterization to a new dimension where the charge and spin transport behaviors can be examined from mesoscopic to atomic length scale. The automation of the atomic scale manipulation and the integration with the well-established lithographic processes would further push this bottom-up approach to a new level that combines reproducible fabrication, extraordinary programmability, and the ability to produce large-scale arrays of quantum structures.
We studied the proximity effect between a superconductor (Nb) and a diluted ferromagnetic alloy (CuNi) in a bilayer geometry. We measured the local density of states on top of the ferromagnetic layer, which thickness varies on each sample, with a very low temperature Scanning Tunneling Microscope. The measured spectra display a very high homogeneity. The analysis of the experimental data shows the need to take into account an additional scattering mechanism. By including in the Usadel equations the effect of the spin relaxation in the ferromagnetic alloy, we obtain a good description of the experimental data.
Hydrogenation of nitrogen (N) doped GaAs allows for reversible tuning of the bandgap and the creation of site controlled quantum dots through the manipulation of N-nH complexes, N-nH complexes, wherein a nitrogen atom is surrounded by n hydrogen (H) atoms. Here we employ cross-sectional scanning tunneling microscopy (X-STM) to study these complexes in the GaAs (110) surface at the atomic scale. In addition to that we performed density functional theory (DFT) calculations to determine the atomic properties of the N-nH complexes. We argue that at or near the (110) GaAs surface two H atoms from N-nH complexes dissociate as an H$_2$ molecule. We observe multiple features related to the hydrogenation process, of which a subset is classified as N-1H complexes. These N-1H related features show an apparent reduction of the local density of states (LDOS), characteristic to N atoms in the GaAs (110) surface with an additional apparent localized enhancement of the LDOS located in one of three crystal directions. N-nH features can be manipulated with the STM tip. Showing in one case a switching behavior between two mirror-symmetric states and in another case a removal of the localized enhancement of the LDOS. The disappearance of the bright contrast is most likely a signature of the removal of an H atom from the N-nH complex.
One of the main challenges in understanding high TC superconductivity is to disentangle the rich variety of states of matter that may coexist, cooperate, or compete with d-wave superconductivity. At center stage is the pseudogap phase, which occupies a large portion of the cuprate phase diagram surrounding the superconducting dome [1]. Using scanning tunneling microscopy, we find that a static, non-dispersive, checkerboard-like electronic modulation exists in a broad regime of the cuprate phase diagram and exhibits strong doping dependence. The continuous increase of checkerboard periodicity with hole density strongly suggests that the checkerboard originates from charge density wave formation in the anti-nodal region of the cuprate Fermi surface. These results reveal a coherent picture for static electronic orderings in the cuprates and shed important new light on the nature of the pseudogap phase.
Silicon (Si) donors in GaAs have been the topic of extensive studies since Si is the most common and well understood n-type dopant in III-V semiconductor devices and substrates. The indirect bandgap of AlAs compared to the direct one of GaAs leads to interesting effects when introducing Si dopants. Here we present a study of cross-sectional scanning tunneling microscopy (X-STM) and density functional theory (DFT) calculations to study Si donors in AlAs at the atomic scale. Based on their crystal symmetry and contrast strengths, we identify Si donors up to four layers below the (110) surface of AlAs. Interestingly, their short-range local density of states (LDOS) is very similar to Si atoms in the (110) surface of GaAs. Additionally we show high-resolution images of Si donors in all these layers. For empty state imaging, the experimental and simulated STM images based on DFT show excellent agreement for Si donor up to two layers below the surface.
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