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Spin-orbit torque opposing the Oersted torque in ultrathin Co/Pt bilayers

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 Added by Timothy Skinner
 Publication date 2013
  fields Physics
and research's language is English




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Current-induced torques in ultrathin Co/Pt bilayers were investigated using an electrically driven FMR technique. The angle dependence of the resonances, detected by a rectification effect as a voltage, were analysed to determine the symmetries and relative magnitudes of the spin-orbit torques. Both anti-damping (Slonczewski) and field-like torques were observed. As the ferromagnet thickness was reduced from 3 to 1 nm, the sign of the field-like torque reversed. This observation is consistent with the emergence of a Rashba spin orbit torque in ultra-thin bilayers.



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The manipulation of the magnetization by spin-orbit torques (SOTs) has recently been extensively studied due to its potential for efficiently writing information in magnetic memories. Particular attention is paid to non-centrosymmetric systems with space inversion asymmetry, where SOTs emerge even in single-layer materials. The half-metallic half-Heusler PtMnSb is an interesting candidate for studies of this intrinsic SOT. Here, we report on the growth and epitaxial properties of PtMnSb thin films and PtMnSb/Pt bilayers deposited on MgO(001) substrates by dc magnetron co-sputtering at high temperature in ultra-high vacuum. The film properties were investigated by x-ray diffraction, x-ray reflectivity, atomic force microscopy, and electron microscopy. Thin PtMnSb films present a monocrystalline C1b phase with (001) orientation, coexisting at increasing thickness with a polycrystalline phase with (111) texture. Films thinner than about 5 nm grow in islands, whereas thicker films grow layer-by-layer, forming a perfect MgO/PtMnSb interface. The thin PtMnSb/Pt bilayers also show island growth and a defective transition zone, while thicker films grow layer-by-layer and Pt grows epitaxially on the half-Heusler compound without significant interdiffusion.
Spin-orbit torque (SOT) induced by spin Hall and interfacial effects in heavy metal(HM)/ferromagnetic(FM) bilayers has recently been employed to switch the magnetization direction using in-plane current injection. In this paper, using the Keldysh Greens function approach and first principles electronic structure calculations we determine the Field-Like (FL) and Damping-Like (DL) components of the SOT for the HM/Co (HM = Pt, Pd) bilayers. Our approach yields the angular dependence of both the FL- and DL-SOT on the magnetization direction without assuming a priori their angular form. Decomposition of the SOT into the Fermi sea and Fermi surface contributions reveals that the SOT is dominated by the latter. Due to the large lattice mismatch between the Co and the HM we have also determined the effect of tensile biaxial strain on both the FL- and DL-SOT components. The calculated dependence of FL- and DL-SOT on the HM thickness is overall in good agreement with experiment. The dependence of the SOT with the position of the Fermi level suggests that the DL-SOT dominated by the Spin Hall effect of the bulk HM.
We have studied the spin orbit torque (SOT) in Pt/Co/Ir multilayers with 3 repeats of the unit structure. As the system exhibits oscillatory interlayer exchange coupling (IEC) with varying Ir layer thickness, we compare the SOT of films when the Co layers are coupled ferromagnetically and antiferromagnetically. SOT is evaluated using current induced shift of the anomalous Hall resistance hysteresis loops. A relatively thick Pt layer, serving as a seed layer to the multilayer, is used to generate spin current via the spin Hall effect. In the absence of antiferromagnetic coupling, the SOT is constant against the applied current density and the corresponding spin torque efficiency (i.e. the effective spin Hall angle) is $sim$0.09, in agreement with previous reports. In contrast, for films with antiferromagnetic coupling, the SOT increases with the applied current density and eventually saturates. The SOT at saturation is a factor of $sim$15 larger than that without the antiferromagnetic coupling. The spin torque efficiency is $sim$5 times larger if we assume the net total magnetization is reduced by a factor of 3 due to the antiferromagnetic coupling. Model calculations based on the Landau Lifshitz Gilbert equation show that the presence of antiferromagnetic coupling can increase the SOT but the degree of enhancement is limited, in this case, to a factor of 1.2-1.4. We thus consider there are other sources of SOT, possibly at the interfaces, which may account for the highly efficient SOT in the uncompensated synthetic anti-ferromagnet (SAF) multilayers.
Efficient generation of spin-orbit torques (SOTs) is central for the exciting field of spin-orbitronics. Platinum, the archetypal spin Hall material, has the potential to be an outstanding provider for spin-orbit torques due to its giant spin Hall conductivity, low resistivity, high stabilities, and the ability to be compatible with CMOS circuits. However, pure clean-limit Pt with low resistivity still provides a low damping-like spin-orbit torque efficiency, which limits its practical applications. The efficiency of spin-orbit torque in Pt-based magnetic heterostructures can be improved considerably by increasing the spin Hall ratio of Pt and spin transmissivity of the interfaces. Here we reviews recent advances in understanding the physics of spin current generation, interfacial spin transport, and the metrology of spin-orbit torques, and summarize progress towards the goal of Pt-based spin-orbit torque memories and logic that are fast, efficient, reliable, scalable, and non-volatile.
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