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Register a new userObservation of Kondo Effect in a Quadruple Quantum Dots
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We investigate the Kondo effect in a quadruple quantum dot device of coupled-double quantum dots (DQDs), which simultaneously contains intra-DQDs and inter-DQDs coupling. A variety of novel behaviors are observed. The differential conductance dI/dV is measured in the upper DQDs as a function of source drain bias. It is found to exhibit multiple peaks, including a zero-bias peak, where the number of peaks exceeds five. Alternatively, tuning the lower DQDs yielded regions of four peaks. In addition, a Kondo-effect switcher is demonstrated, using the lower DQDs as the controller.
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Numerical analysis of the simplest odd-numbered system of coupled quantum dots reveals an interplay between magnetic ordering, charge fluctuations and the tendency of itinerant electrons in the leads to screen magnetic moments. The transition from local-moment to molecular-orbital behavior is visible in the evolution of correlation functions as the inter-dot coupling is increased. Resulting novel Kondo phases are presented in a phase diagram which can be sampled by measuring the zero-bias conductance. We discuss the origin of the even-odd effects by comparing with the double quantum dot.
A dilute concentration of magnetic impurities can dramatically affect the transport properties of an otherwise pure metal. This phenomenon, known as the Kondo effect, originates from the interactions of individual magnetic impurities with the conduction electrons. Nearly a decade ago, the Kondo effect was observed in a new system, in which the magnetic moment stems from a single unpaired spin in a lithographically defined quantum dot, or artificial atom. The discovery of the Kondo effect in artificial atoms spurred a revival in the study of Kondo physics, due in part to the unprecedented control of relevant parameters in these systems. In this review we discuss the physics, origins, and phenomenology of the Kondo effect in the context of recent quantum dot experiments.
We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.
We investigate quantum dots in clean single-wall carbon nanotubes with ferromagnetic PdNi-leads in the Kondo regime. In most odd Coulomb valleys the Kondo resonance exhibits a pronounced splitting, which depends on the tunnel coupling to the leads and an external magnetic field $B$, and only weakly on gate voltage. Using numerical renormalization group calculations, we demonstrate that all salient features of the data can be understood using a simple model for the magnetic properties of the leads. The magnetoconductance at zero bias and low temperature depends in a universal way on $g mu_B (B-B_c) / k_B T_K$, where $T_K$ is the Kondo temperature and $B_c$ the external field compensating the splitting.
We report the observation of Kondo physics in a spin- 3/2 hole quantum dot. The dot is formed close to pinch-off in a hole quantum wire defined in an undoped AlGaAs/GaAs heterostructure. We clearly observe two distinctive hallmarks of quantum dot Kondo physics. First, the Zeeman spin-splitting of the zero-bias peak in the differential conductance is independent of gate voltage. Second, this splitting is twice as large as the splitting for the lowest one-dimensional subband. We show that the Zeeman splitting of the zero-bias peak is highly-anisotropic, and attribute this to the strong spin-orbit interaction for holes in GaAs.
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