Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userPredicting the growth rate of helium bubbles in metal tritide
69
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Helium bubbles nucleation and growth in metals or metal tritide is a long-standing problem attracting considerable attention in nuclear industry but the mechanism remains indistinct and predicting the growth rate of helium bubble is inexistence still up to new. Here, the rate of helium bubbles nucleation and growth in metal tritide is developed based on a dynamical model, which describes the diameter of helium bubbles increasing linearly as t**(1/3) in titanium tritide at room temperature, agreeing quite well with the experimental phenomenon. The way of reducing storage temperature from 300 to 225 K or increasing the helium atoms diffusion barrier from 0.81 to 1.1 eV can effectively restrain bubbles growth and prolong lifetime of titanium tritide more than 4 times, which provides a useful reference to relevant experiment exploration and applications. This model also can be used to predict lifetime of new tritium-storage materials and plasma facing materials in nuclear industry.
rate research
Read More
We demonstrate control of the carrier density of single phase anatase TiO2 thin films by nearly two orders of magnitude by modulating the growth kinetics during pulsed laser deposition, under fixed thermodynamic conditions. The resistivity and the intensity of the photoluminescence spectra of these TiO2 samples, both of which correlate with the number of oxygen vacancies, are shown to depend strongly on the growth rate. A quantitative model is used to explain the carrier density changes.
In graphene growth, island symmetry can become lower than the intrinsic symmetries of both graphene and the substrate. First-principles calculations and Monte Carlo modeling explain the shapes observed in our experiments and earlier studies for various metal surface symmetries. For equilibrium shape, edge energy variations $delta E$ manifest in distorted hexagons with different ground-state edge structures. In growth or nucleation, energy variation enters exponentially as $sim e^{delta E / k_{B} T}$, strongly amplifying the symmetry breaking, up to completely changing the shapes to triangular, ribbon-like, or rhombic.
We develop a model for the gliding of dislocations and plasticity in solid He-4. This model takes into account the Peierls barrier, multiplication and interaction of dislocations, as well as classical thermally and mechanically activated processes leading to dislocation glide. We specifically examine the dc stress-strain curve and how it is affected by temperature, strain rate, and dislocation density. As a function of temperature and shear strain, we observe plastic deformation and discuss how this may be related to the experimental observation of elastic anomalies in solid hcp He-4 that have been discussed in connection with the possibility of supersolidity or giant plasticity. Our theory gives several predictions for the dc stress strain curves, for example, the yield point and the change in the work-hardening rate and plastic dissipation peak, that can be compared directly to constant strain rate experiments and thus provide bounds on model parameters.
Within Density Functional Theory, we have calculated the energy of the transitions from the ground state to the first two excited states in the electron bubbles in liquid helium at pressures from zero to about the solidification pressure. For $^4$He at low temperatures, our results are in very good agreement with infrared absorption experiments. Above a temperature of $sim 2$ K, we overestimate the energy of the $1s-1p$ transition. We attribute this to the break down of the Franck-Condon principle due to the presence of helium vapor inside the bubble. Our results indicate that the $1s-2p$ transition energies are sensitive not only to the size of the electron bubble, but also to its surface thickness. We also present results for the infrared transitions in the case of liquid $^3$He, for which we lack of experimental data.
In the crystal growth of transition metal dichalcogenides by the Chemical Vapor Transport method (CVT), the choice of the transport agent plays a key role. We have investigated the effect of various chemical elements and compounds on the growth of TiSe2, MoSe2, TaS2 and TaSe2 and found that pure I2 is the most suitable for growing TiSe2, whereas transition metal chlorides perform best with Mo- and Ta- chalcogenides. The use of TaCl5 as a transport agent in the CVT process allows to selectively growth either polymorph of TaS2 and TaSe2 and the optimum growth conditions are reported. Moreover, by using TaCl5 and tuning the temperature and the halogen starting ratio, it was possible to grow whiskers of the compounds TaS2, TaSe2, TaTe2, TaS3 and TaSe3.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
