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Register a new userMagneto-transport Subbands Spectroscopy in InAs Nanowires
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We report on magneto-transport measurements in InAs nanowires under large magnetic field (up to 55T), providing a direct spectroscopy of the 1D electronic band structure. Large modulations of the magneto-conductance mediated by an accurate control of the Fermi energy reveal the Landau fragmentation, carrying the fingerprints of the confined InAs material. Our numerical simulations of the magnetic band structure consistently support the experimental results and reveal key parameters of the electronic confinement.
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The coupling of electron orbital motion and spin leads to nontrivial changes in energy-level structures, leading to various spectroscopies and applications. In atoms, such spin-orbit coupling (SOC) causes anomalous Zeeman splitting, known as the Paschen-Back (PB) effect, in the pres-ence of a strong magnetic field. In solids, SOC generates energy-band inversion or splitting, a prerequisite for topological phases or Majorana fermions, at zero or weak magnetic fields. Here, we present the first observation of PB splitting of Landau levels (LLs) in indium arsenide nan-owires in a strong-field regime. Our energy-resolved transport spectroscopy results indicated the presence of LL-dependent anomalous Zeeman splitting in these nanowires, analogous to the atomic PB effect. This result was found to be in good agreement with a theoretical analysis based on Rashba SOC. Our findings also suggested a way of generating spin-resolved electron transport in nanowires.
We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of hexagonal Wurtzite InAs. Signatures of optical transitions between four valence bands and two conduction bands are observed which are consistent with the symmetries expected from group theory. The ground state transition energy identified from photocurrent spectra is seen to be consistent with photoluminescence emitted from a cluster of nanowires from the same growth substrate. From the energies of the observed bands we determine the spin orbit and crystal field energies in Wurtzite InAs. This information is essential to the development of crystal phase engineering of this important III-V semiconductor.
Magneto-intersubband resistance oscillations (MISO) of highly mobile 2D electrons in symmetric GaAs quantum wells with two populated subbands are studied in magnetic fields tilted from the normal to the 2D electron layer at different temperatures $T$. Decrease of MISO amplitude with temperature increase is observed. At moderate tilts the temperature decrease of MISO amplitude is consistent with decrease of Dingle factor due to reduction of quantum electron lifetime at high temperatures. At large tilts new regime of strong MISO suppression with the temperature is observed. Proposed model relates this suppression to magnetic entanglement between subbands, leading to beating in oscillating density of states. The model yields corresponding temperature damping factor: $A_{MISO}(T)=X/sinh(X)$, where $X=2pi^2kTdelta f$ and $delta f$ is difference frequency of oscillations of density of states in two subbands. This factor is in agreement with experiment. Fermi liquid enhancement of MISO amplitude is observed.
Dispersive charge sensing is realized in hybrid semiconductor-superconductor nanowires in gate-defined single- and double-island device geometries. Signal-to-noise ratios (SNRs) were measured both in the frequency and time domain. Frequency-domain measurements were carried out as a function of frequency and power and yield a charge sensitivity of $1 times 10^{-3} e/sqrt{rm Hz}$ for an 11 MHz measurement bandwidth. Time-domain measurements yield SNR > 1 for 20 $mu$s integration time. At zero magnetic field, photon-assisted tunneling was detected dispersively in a double-island geometry, indicating coherent hybridization of the two superconducting islands. At an axial magnetic field of 0.6 T, subgap states are detected dispersively, demonstrating the suitability of the method for sensing in the topological regime.
In the current paper a set of experiments dedicated to investigations of local electronic transport in undoped InAs nanowires at helium temperatures in the presence of a charged atomic-force microscope tip is presented. Both nanowires without defects and with internal tunneling barriers were studied. The measurements were performed at various carrier concentrations in the systems and opacity of contact-to-wire interfaces. The regime of Coulomb blockade is investigated in detail including negative differential conductivity of the whole system. The situation with open contacts with one tunneling barrier and undivided wire is also addressed. Special attention is devoted to recently observed quasi-periodic standing waves.
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