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Register a new userSingle-crystal superconducting nanowires of NbSe$_2$ fabricated by reactive plasma etching
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We present the preparation and measurements of nanowires of single-crystal NbSe$_2$. These nanowires were prepared on ultrathin ($lesssim10text{ nm}$) flakes of NbSe$_2$ mechanically exfoliated from a bulk single crystal using a process combining electron beam lithography and reactive plasma etching. The electrical contacts to the nanowires were prepared using Ti/Au. Our technique, which overcomes several limitations of methods developed previously for fabricating superconducting nanowires, also allows for the preparation of complex superconducting nanostructures with a desired geometry. Current-voltage characteristics of individual superconducting single-crystal nanowires with widths down to 30~nm and cross-sectional areas as low as 270 nm$^2$ were measured for the first time.
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Nanowires of two-dimensional (2D) crystals of type-II superconductor NbSe$_2$ prepared by electron-beam lithography were studied, focusing on the effect of the motion of Abrikosov vortices. We present magnetoresistance measurements on these nanowires and show features related to vortex crossing, trapping, and pinning. The vortex crossing rate was found to vary non-monotonically with the applied field, which results in non-monotonic magnetoresistance variations in agreement with theoretical calculations in the London approximation. Above the lower critical field, $H_{c1}$, the crossing rate is also influenced by vortices trapped by sample boundaries or pinning centers, leading to sample-specific magnetoresistance patterns. We show that the local pinning potential can be modified by intentionally introducing surface adsorbates, making the magnetoresistance pattern a magneto fingerprint of the sample-specific configuration of vortex pinning centers in a 2D crystal superconducting nanowire.
We have used a neon focused-ion-beam to fabricate both nanoscale Nb Dayem bridges and NbN phase-slip nanowires located at the short-circuited end of quarter-wavelength coplanar waveguide resonators. The Dayem bridge devices show flux-tunability and intrinsic quality factor exceeding 10,000 at 300 mK up to local fields of at least 60 mT. The NbN nanowires show signatures of incoherent quantum tunnelling of flux at 300 mK.
Two-dimensional transition metal dichalcogenides with strong spin-orbit interactions and valley-dependent Berry curvature effects have attracted tremendous recent interests. Although novel single-particle and excitonic phenomena related to spin-valley coupling have been extensively studied, effects of spin-momentum locking on collective quantum phenomena remain unexplored. Here we report an observation of superconducting monolayer NbSe$_2$ with an in-plane upper critical field over six times of the Pauli paramagnetic limit by magneto-transport measurements. The effect can be understood in terms of the competing Zeeman effect and large intrinsic spin-orbit interactions in non-centrosymmetric NbSe$_2$ monolayers, where the electronic spin is locked to the out-of-plane direction. Our results provide a strong evidence of unconventional Ising pairing protected by spin-momentum locking and open up a new avenue for studies of non-centrosymmetric superconductivity with unique spin and valley degrees of freedom in the exact two-dimensional limit.
We present a high energy-resolution inelastic x-ray scattering data investigation of the charge-density-wave (CDW) soft phonon mode upon entering the superconducting state in $2H$-NbSe$_2$. Measurements were done close to the CDW ordering wavevector $mathbf{q}_{CDW}$ at $mathbf{q}=mathbf{q}_{CDW}+(0,0,l)$,$0.15leq l leq 0.5$, for $T=10,rm{K}$ (CDW order) and $3.8,rm{K}$ (CDW order + superconductivity). We observe changes of the phonon lineshape that are characteristic for systems with strong electron-phonon coupling in the presence of a superconducting energy gap $2Delta_c$ and from which we can demonstrate an $l$-dependence of the superconducting gap. Reversely, our data imply that the CDW energy gap is strongly localized along the $c^*$ direction. The confinement of the CDW gap to a very small momentum region explains the rather low competition and easy coexistence of CDW order and superconductivity in $2H$-NbSe$_2$. However, the energy gained by opening $Delta_{CDW}$ seems to be too small to be the driving force of the phase transition at $T_{CDW}=33,rm{K}$ , which is better described as an electron-phonon coupling driven structural phase transition.
We show the results of two-terminal and four-terminal transport measurements on few-layer NbSe$_2$ devices at large current bias. In all the samples measured, transport characteristics at high bias are dominated by a series of resistance jumps due to nucleation of phase slip lines, the two dimensional analogue of phase slip centers. In point contact devices the relatively simple and homogeneous geometry enables a quantitative comparison with the model of Skocpol, Beasley and Tinkham. In extended crystals the nucleation of a single phase slip line can be induced by mechanical stress of a region whose width is comparable to the charge imbalance equilibration length.
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