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Register a new userTunable phonon-induced transparency in bilayer graphene nanoribbons
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In the phenomenon of electromagnetically induced transparency1 (EIT) of a three-level atomic system, the linear susceptibility at the dipole-allowed transition is canceled through destructive interference of the direct transition and an indirect transition pathway involving a meta-stable level, enabled by optical pumping. EIT not only leads to light transmission at otherwise opaque atomic transition frequencies, but also results in the slowing of light group velocity and enhanced optical nonlinearity. In this letter, we report an analogous behavior, denoted as phonon-induced transparency (PIT), in AB-stacked bilayer graphene nanoribbons. Here, light absorption due to the plasmon excitation is suppressed in a narrow window due to the coupling with the infrared active {Gamma}-point optical phonon, whose function here is similar to that of the meta-stable level in EIT of atomic systems. We further show that PIT in bilayer graphene is actively tunable by electrostatic gating, and estimate a maximum slow light factor of around 500 at the phonon frequency of 1580 cm-1, based on the measured spectra. Our demonstration opens an avenue for the exploration of few-photon non-linear optics and slow light in this novel two-dimensional material, without external optical pumping and at room temperature.
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We investigate the intraband nonlinear dynamics in doped bilayer graphene in the presence of strong, linearly-polarized, in-plane terahertz fields. We perform degenerate pump-probe experiments with 3.4 THz fields on doped bilayer graphene at low temperature (12 K) and find that when the pump is co-polarized with the probe beam, the differential pump-probe signal is almost double that found in the cross-polarized case. We show that the origin of this pump-induced anisotropy is the difference in the average electron effective mass in the probe direction when carriers are displaced in k-space by the pump either parallel or perpendicular to the direction of the probe polarization. We model the system using both a simple semiclassical model and a Boltzmann equation simulation of the electron dynamics with phenomenological scattering and find good qualitative agreement with experimental results.
The search of new means of generating and controlling topological states of matter is at the front of many joint efforts, including bandgap engineering by doping and light-induced topological states. Most of our understading, however, is based on a single particle picture. Topological states in systems including interaction effects, such as electron-electron and electron-phonon, remain less explored. By exploiting a non-perturbative and non-adiabatic picture, here we show how the interaction between electrons and a coherent phonon mode can lead to a bandgap hosting edge states of topological origin. Further numerical simulations witness the robustness of these states against different types of disorder. Our results contribute to the search of topological states, in this case in a minimal Fock space.
The effects of Coulomb interactions on the electronic properties of bilayer graphene nanoribbons (BGNs) covered by a gate electrode are studied theoretically. The electron density distribution and the potential profile are calculated self-consistently within the Hartree approximation. A comparison to their single-particle counterparts reveals the effects of interactions and screening. Due to the finite width of the nanoribbon in combination with electronic repulsion, the gate-induced electrons tend to accumulate along the BGN edges where the potential assumes a sharp triangular shape. This has a profound effect on the energy gap between electron and hole bands, which depends nonmonotonously on the gate voltage and collapses at intermediate electric fields. We interpret this behavior in terms of interaction-induced warping of the energy dispersion.
Graphene nanoribbons (GNRs) possess distinct symmetry-protected topological phases. We show, through first-principles calculations, that by applying an experimentally accessible transverse electric field (TEF), certain boron and nitrogen periodically co-doped GNRs have tunable topological phases. The tunability arises from a field-induced band inversion due to an opposite response of the conduction- and valance-band states to the electric field. With a spatially-varying applied field, segments of GNRs of distinct topological phases are created, resulting in a field-programmable array of topological junction states, each may be occupied with charge or spin. Our findings not only show that electric field may be used as an easy tuning knob for topological phases in quasi-one-dimensional systems, but also provide new design principles for future GNR-based quantum electronic devices through their topological characters.
A theoretical study of the magnetoelectronic properties of zigzag and armchair bilayer graphene nanoribbons (BGNs) is presented. Using the recursive Greens function method, we study the band structure of BGNs in uniform perpendicular magnetic fields and discuss the zero-temperature conductance for the corresponding clean systems. The conductance quantized as 2(n+1)G_ for the zigzag edges and nG_0 for the armchair edges with G_{0}=2e^2/h being the conductance unit and $n$ an integer. Special attention is paid to the effects of edge disorder. As in the case of monolayer graphene nanoribbons (GNR), a small degree of edge disorder is already sufficient to induce a transport gap around the neutrality point. We further perform comparative studies of the transport gap E_g and the localization length in bilayer and monolayer nanoribbons. While for the GNRs E_{g}^{GNR}is proportional to 1/W, the corresponding transport gap E_{g}^{BGN} for the bilayer ribbons shows a more rapid decrease as the ribbon width W is increased. We also demonstrate that the evolution of localization lengths with the Fermi energy shows two distinct regimes. Inside the transport gap, xi is essentially independent on energy and the states in the BGNs are significantly less localized than those in the corresponding GNRs. Outside the transport gap xi grows rapidly as the Fermi energy increases and becomes very similar for BGNs and GNRs.
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