No Arabic abstract
We have studied the electrodynamic response of strongly disordered superconducting TiN films using microwave resonators, where the disordered superconductor is the resonating element in a high- quality superconducting environment of NbTiN. We describe the response assuming an effective pair-breaking mechanism modifying the density of states, and compare this to local tunnelling spectra obtained using scanning tunnelling spectroscopy. For the least disordered film (kFl = 8.7, Rs = 13 {Omega}), we find good agreement, whereas for the most disordered film (kFl = 0.82, Rs = 4.3 k{Omega}), there is a strong discrepancy, which signals the breakdown of a model based on uniform properties.
The non-contact broadband transmission line flip-chip spectroscopy technique is utilized to probe resonances of mm-sized square kinetic planar resonators made from strongly disordered molybdenum carbide films, in the GHz frequency range. The temperature dependence of the resonances was analyzed by the complex conductivity of disordered superconductor, as proposed in Ref. arXiv:1407.2402 , which involves the Dynes superconducting density of states. The obtained Dynes broadening parameters relate reasonably to the ones estimated from scanning tunneling spectroscopy measurements. The eigenmodes of the kinetic planar 2D resonator were visualized by EM model in Sonnet software. The proper understanding of the nature of these resonances can help to eliminate them, or utilize them e.g. as filters.
The effects of microwave radiation on the transport properties of atomically thin $La_{2-x}Sr_xCuO_4$ films were studied in the 0.1-13 GHz frequency range. Resistance changes induced by microwaves were investigated at different temperatures near the superconducting transition. The nonlinear response decreases by several orders of magnitude within a few GHz of a cutoff frequency $ u_{cut} approx$ 2 GHz. Numerical simulations that assume an ac response to follow the dc V-I characteristics of the films reproduce well the low frequency behavior, but fail above $ u_{cut}$. The results indicate that two-dimensional superconductivity is resilient against high-frequency microwave radiation, because vortex-antivortex dissociation is dramatically suppressed in two-dimensional superconducting condensates oscillating at high frequencies.
We have grown superconducting TiN films by atomic layer deposition with thicknesses ranging from 6 to 89 nm. This deposition method allows us to tune the resistivity and critical temperature by controlling the film thickness. The microwave properties are measured, using a coplanar-waveguide resonator, and we find internal quality factors above a million, high sheet inductances (5.2-620 pH), and pulse response times up to 100 mu s. The high normal state resistivity of the films (> 100 muOmega cm) affects the superconducting state and thereby the electrodynamic response. The microwave response is modeled using a quasiparticle density of states modified with an effective pair-breaker,consistently describing the measured temperature dependence of the quality factor and the resonant frequency.
We perform the scanning tunneling spectroscopy based superconductor-vacuum-superconductor analogue to the seminal McMillan and Rowell superconductor-insulator-superconductor device study of phonons in the archetypal elemental superconductor Pb [W. L. McMillan and J. M. Rowell, Phys. Rev. Lett. 14, 108 (1965)]. We invert this spectroscopic data utilizing strong-coupling Eliashberg theory to obtain a local {alpha}^2F({omega}) and find broad underlying agreement with the pioneering results, highlighted by previously unobserved electron-hole asymmetries and new fine structure which we discuss in terms of both conventional and unconventional superconducting bosonics.
We investigate experimentally the electric transport at the insulating side of the superconductor to insulator transition in thin TiN-films. At temperatures T > 50 mK we observe an Arrhenius-type conductance, with an activation energy depending logarithmically on the sample size. At high bias the current voltage (I-V) characteristics display a large current jump into an electron heating dominated regime. For the largest samples, and below 50 mK we observe a low-bias power law I ~ V^alpha characteristics with an exponent alpha > 1 rapidly growing with decreasing temperature, which is expected for a binding-unbinding crossover of the charge-Berezinskii-Kosterlitz-Thouless type.