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Register a new userStructural manipulation of the graphene/metal-interface with Ar+ irradiation
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Controlled defect creation is a prerequisite for the detailed study of disorder effects in materials. Here, we irradiate a graphene/Ir(111)-interface with low-energy Ar+ to study the induced structural changes. Combining computer simulations and scanning-probe microscopy, we show that the resulting disorder manifests mainly in the forms of intercalated metal adatoms and vacancy-type defects in graphene. One prominent feature at higher irradiation energies (from 1 keV up) is the formation of line-like depressions, which consist of sequential graphene defects created by the ion channeling within the interface -- much like a stone skipping on water. Lower energies result in simpler defects, down to 100 eV where more than one defect in every three is a graphene single vacancy.
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We show that the work function of exfoliated single layer graphene can be modified by irradiation with swift (E_{kin}=92 MeV) heavy ions under glancing angles of incidence. Upon ion impact individual surface tracks are created in graphene on SiC. Due to the very localized energy deposition characteristic for ions in this energy range, the surface area which is structurally altered is limited to ~ 0.01 mum^2 per track. Kelvin probe force microscopy reveals that those surface tracks consist of electronically modified material and that a few tracks suffice to shift the surface potential of the whole single layer flake by ~ 400 meV. Thus, the irradiation turns the initially n-doped graphene into p-doped graphene with a hole density of 8.5 x 10^{12} holes/cm^2. This doping effect persists even after heating the irradiated samples to 500{deg}C. Therefore, this charge transfer is not due to adsorbates but must instead be attributed to implanted atoms. The method presented here opens up a new way to efficiently manipulate the charge carrier concentration of graphene.
We report the structural and electronic properties of an artificial graphene/Ni(111) system obtained by the intercalation of a monoatomic layer of Ni in graphene/Ir(111). Upon intercalation, Ni grows epitaxially on Ir(111), resulting in a lattice mismatched graphene/Ni system. By performing Scanning Tunneling Microscopy (STM) measurements and Density Functional Theory (DFT) calculations, we show that the intercalated Ni layer leads to a pronounced buckling of the graphene film. At the same time an enhanced interaction is measured by Angle-Resolved Photo-Emission Spectroscopy (ARPES), showing a clear transition from a nearly-undisturbed to a strongly-hybridized graphene $pi$-band. A comparison of the intercalation-like graphene system with flat graphene on bulk Ni(111), and mildly corrugated graphene on Ir(111), allows to disentangle the two key properties which lead to the observed increased interaction, namely lattice matching and electronic interaction. Although the latter determines the strength of the hybridization, we find an important influence of the local carbon configuration resulting from the lattice mismatch.
Regular arrays of InP nano pillars have been fabricated by low energy Electron Cyclotron Resonance (ECR) Ar+ ion irradiation on InP(111) surface. Several scanning electron microscopy (SEM) images have been utilized to invetsigate the width, height, and orientation of these nano pillars on InP(111) surfaces. The average width and length of these nano-pillars are about 50 nm and 500 nm, respectively. The standing angle with respect to the surface of the nano-pillars depend on the incidence angle of the Ar ion irradiation during the fabrication process. Interestingly, the growth direction of the nano pillars are along the reflection direction of the ion beam and the standing angles are nearly same as the ion incidence angle with the surface normal. This nano-pillas are easily transferred from the InP surface to double sided carbon tape without any damage. High Resolution Transmission Electron Microscopy (HRTEM) study of single nano-pillar reveals that this nano-pillar are almost crystalline in nature except 2-4 nm amorphous layer on the outer surface. The transmission electron microscopy combined with energy-dispersive x-ray spectroscopy (TEM-EDS) analysis of these nano pillars exhibit that the ratio of In and P is little higher compared to the bulk InP.
In this paper we show how single layer graphene can be utilized to study swift heavy ion (SHI) modifications on various substrates. The samples were prepared by mechanical exfoliation of bulk graphite onto SrTiO$_3$, NaCl and Si(111), respectively. SHI irradiations were performed under glancing angles of incidence and the samples were analysed by means of atomic force microscopy in ambient conditions. We show that graphene can be used to check whether the irradiation was successful or not, to determine the nominal ion fluence and to locally mark SHI impacts. In case of samples prepared in situ, graphene is shown to be able to catch material which would otherwise escape from the surface.
Making devices with graphene necessarily involves making contacts with metals. We use density functional theory to study how graphene is doped by adsorption on metal substrates and find that weak bonding on Al, Ag, Cu, Au and Pt, while preserving its unique electronic structure, can still shift the Fermi level with respect to the conical point by $sim 0.5$ eV. At equilibrium separations, the crossover from $p$-type to $n$-type doping occurs for a metal work function of $sim 5.4$ eV, a value much larger than the graphene work function of 4.5 eV. The numerical results for the Fermi level shift in graphene are described very well by a simple analytical model which characterizes the metal solely in terms of its work function, greatly extending their applicability.
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