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We present a fully general derivation of the Laplace--Young formula and discuss the interplay between the intrinsic surface geometry and the extrinsic one ensuing from the immersion of the surface in the ordinary euclidean three-dimensional space. We prove that the (reversible) work done in a general surface deformation can be expressed in terms of the surface stress tensor and the variation of the intrinsic surface metric.
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We have studied the segregation of P and B impurities during oxidation of the Si(100) surface by means of combined static and dynamical first-principles simulations based on density functional theory. In the bare surface, dopants segregate to chemically stable surface sites or to locally compressed subsurface sites. Surface oxidation is accompanied by development of tensile surface stress up to 2.9 N/m at a coverage of 1.5 monolayers of oxygen and by formation of oxidised Si species with charges increasing approximately linearly with the number of neighbouring oxygen atoms. Substitutional P and B defects are energetically unstable within the native oxide layer, and are preferentially located at or beneath the Si/SiOx interface. Consistently, first-principles molecular dynamics simulations of native oxide formation on doped surfaces reveal that dopants avoid the formation of P-O and B-O bonds, suggesting a surface oxidation mechanism whereby impurities remain trapped at the Si/SiOx interface. This seems to preclude a direct influence of impurities on the surface electrostatics and, hence, on the interactions with an external environment.
Skyrmions in chiral magnetic materials are topologically stable and energetically balanced spin configurations appearing under the presence of ferromagnetic interaction (FMI) and Dzyaloshinskii-Moriya interaction (DMI). Much of the current interest has focused on the effects of magneto-elastic coupling on these interactions under mechanical stimuli, such as uniaxial stresses for future applications in spintronics devices. Recent studies suggest that skyrmion shape deformations in thin films are attributed to an anisotropy in the coefficient of DMI, such that $D_{x}! ot=!D_{y}$, which makes the ratio $lambda/D$ anistropic, where the coefficient of FMI $lambda$ is isotropic. It is also possible that $lambda_{x}! ot=!lambda_{y}$ while $D$ is isotropic for $lambda/D$ to be anisotropic. In this paper, we study this problem using a new modeling technique constructed based on Finsler geometry (FG). Two possible FG models are examined: In the first (second) model, the FG modeling prescription is applied to the FMI (DMI) Hamiltonian. We find that these two different FG models results are consistent with the reported experimental data for skyrmion deformation. We also study responses of helical spin orders under lattice deformations corresponding to uniaxial extension/compression and find a clear difference between these two models in the stripe phase, elucidating which interaction of FMI and DMI is deformed to be anisotropic by uniaxial stresses.
The aim of this study is to probe the influence of water vapor environment on the microtribological properties of a forestlike vertically aligned carbon nanotube (VACNT) film, deposited on a silicon (001) substrate by chemical vapor deposition. Tribological experiments were performed using a gold tip under relative humidity varying from 0 to 100%. Very low adhesion forces and high friction coefficients of 0.6 to 1.3 resulted. The adhesion and friction forces were independent of humidity, due probably to the high hydrophobicity of VACNT. These tribological characteristics were compared to those of a diamond like carbon (DLC) sample.
Bias stress degradation in conjugated polymer field-effect transistors is a fundamental problem in these disordered materials and can be traced back to interactions of the material with environmental species,1,2,3 as well as fabrication-induced defects.4,5 However, the effect of the end groups of the polymer gate dielectric and the associated dipole-induced disorder on bias stress stability has not been studied so far in high-performing n-type materials, such as N2200.6,7 In this work, the performance metrics of N2200 transistors are examined with respect to dielectrics with different end groups (Cytop-M and Cytop-S8). We hypothesize that the polar end groups would lead to increased dipole-induced disorder, and worse performance.1,9,10 The long-time annealing scheme at lower temperatures used in the paper is assumed to lead to better crystallization by allowing the crystalline domains to reorganize in the presence of the solvent.11 It is hypothesized that the higher crystallinity could narrow down the range at which energy carriers are induced and thus decrease the gate dependence of the mobility. The results show that the dielectric end groups do not influence the bias stress stability of N2200 transistors. However, long annealing times result in a dramatic improvement in bias stress stability, with the most stable devices having a mobility that is only weakly dependent on or independent of gate voltage.
Stability of coarse particles against gravity is an important issue in dense suspensions (fresh concrete, foodstuff, etc.). On the one hand, it is known that they are stable at rest when the interstitial paste has a high enough yield stress; on the other hand, it is not yet possible to predict if a given material will remain homogeneous during a flow. Using MRI techniques, we study the time evolution of the particle volume fraction during the flows in a Couette geometry of model density-mismatched suspensions of noncolloidal particles in yield stress fluids. We observe that shear induces sedimentation of the particles in all systems, which are stable at rest. The sedimentation velocity is observed to increase with increasing shear rate and particle diameter, and to decrease with increasing yield stress of the interstitial fluid. At low shear rate (plastic regime), we show that this phenomenon can be modelled by considering that the interstitial fluid behaves like a viscous fluid -- of viscosity equal to the apparent viscosity of the sheared fluid -- in the direction orthogonal to shear. The behavior at higher shear rates, when viscous effects start to be important, is also discussed. We finally study the dependence of the sedimentation velocity on the particle volume fraction, and show that its modelling requires estimating the local shear rate in the interstitial fluid.
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