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Quantum phase transitions of a disordered antiferromagnetic topological insulator

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 Added by Paul Baireuther
 Publication date 2013
  fields Physics
and research's language is English




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We study the effect of electrostatic disorder on the conductivity of a three-dimensional antiferromagnetic insulator (a stack of quantum anomalous Hall layers with staggered magnetization). The phase diagram contains regions where the increase of disorder first causes the appearance of surface conduction (via a topological phase transition), followed by the appearance of bulk conduction (via a metal-insulator transition). The conducting surface states are stabilized by an effective time-reversal symmetry that is broken locally by the disorder but restored on long length scales. A simple self-consistent Born approximation reliably locates the boundaries of this socalled statistical topological phase.

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We investigate disorder-driven topological phase transitions in quantized electric quadrupole insulators. We show that chiral symmetry can protect the quantization of the quadrupole moment $q_{xy}$, such that the higher-order topological invariant is well-defined even when disorder has broken all crystalline symmetries. Moreover, nonvanishing $q_{xy}$ and consequent corner modes can be induced from a trivial insulating phase by disorder that preserves chiral symmetry. The critical points of such topological phase transitions are marked by the occurrence of extended boundary states even in the presence of strong disorder. We provide a systematic characterization of these disorder-driven topological phase transitions from both bulk and boundary descriptions.
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