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Register a new userDimerization-Induced Cross-Layer Quasi-Two-Dimensionality in Metallic Iridate IrTe2
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The crystal structure of layered metal IrTe2 is determined using single-crystal x-ray diffraction. At T=220 K, it exhibits Ir and Te dimers forming a valence-bond crystal. Electronic structure calculations reveal an intriguing quasi-two-dimensional electronic state, with planes of reduced density of states cutting diagonally through the Ir and Te layers. These planes are formed by the Ir and Te dimers, which exhibit a signature of covalent bonding character development. Evidence for significant charge disproportionation among the dimerized and non-dimerized Ir (charge order) is also presented.
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We studied the effect of external pressure on the electrodynamic properties of $alpha$-Li$_2$IrO$_3$ single crystals in the frequency range of the phonon modes and the Ir $d$-$d$ transitions. The abrupt hardening of several phonon modes under pressure supports the onset of the dimerized phase at the critical pressure $P_c$=3.8 GPa. With increasing pressure an overall decrease in spectral weight of the Ir $d$-$d$ transitions is found up to $P_c$. Above $P_c$, the local (on-site) $d$-$d$ excitations gain spectral weight with increasing pressure, which hints at a pressure-induced increase in the octahedral distortions. The non-local (intersite) Ir $d$-$d$ transitions show a monotonic blue-shift and decrease in spectral weight. The changes observed for the non-local excitations are most prominent well above $P_c$, namely for pressures $geq$12 GPa, and only small changes occur for pressures close to $P_c$. The profile of the optical conductivity at high pressures ($sim$20 GPa) appears to be indicative for the dimerized state in iridates.
A pressure-induced collapse of magnetic ordering in $beta$-Li$_2$IrO$_3$ at $P_msim1.5- 2$ GPa has previously been interpreted as evidence for possible emergence of spin liquid states in this hyperhoneycomb iridate, raising prospects for experimental realizations of the Kitaev model. Based on structural data obtained at emph{room temperature}, this magnetic transition is believed to originate in small lattice perturbations that preserve crystal symmetry, and related changes in bond-directional anisotropic exchange interactions. Here we report on the evolution of the crystal structure of $beta$-Li$_2$IrO$_3$ under pressure at low temperatures ($Tleq50$ K) and show that the suppression of magnetism coincides with a change in lattice symmetry involving Ir-Ir dimerization. The critical pressure for dimerization shifts from 4.4(2) GPa at room temperature to $sim1.5-2$ GPa below 50 K. While a direct $Fddd rightarrow C2/c$ transition is observed at room temperature, the low temperature transitions involve new as well as coexisting dimerized phases. Further investigation of the Ir ($L_3$/$L_2$) isotropic branching ratio in x-ray absorption spectra indicates that the previously reported departure of the electronic ground state from a $J_{rm{eff}}=1/2$ state is closely related to the onset of dimerized phases. In essence, our results suggest that the predominant mechanism driving the collapse of magnetism in $beta$-Li$_2$IrO$_3$ is the pressure-induced formation of Ir$_2$ dimers in the hyperhoneycomb network. The results further confirm the instability of the $J_{rm{eff}}=1/2$ moments and related non-collinear spiral magnetic ordering against formation of dimers in the low-temperature phase of compressed $beta$-Li$_2$IrO$_3$.
Layered 5d transition metal dichalcogenide (TMD) IrTe2 is distinguished from the traditional TMDs (such as NbSe2) by the existence of multiple CDW-like stripe phases and superconductivity at low temperatures. Despite of intensive studies, there is still no consensus on the physical origin of the stripe phases or even the ground state modulation for this 5d material. Here, we present atomic-scale evidence from scanning tunneling microscopy and spectroscopy (STM/STS), that the ground state of IrTe2 is a q=1/6 stripe phase, identical to that of the Se-doped compound. Furthermore, our data suggest that the multiple transitions and stripe phases are driven by the intralayer Ir-Ir dimerization that competes against the interlayer Te-Te bonding. The competition results in a unified phase diagram with a series of hierarchical modulated stripe phases, strikingly similar to the renowned devils staircase phenomena.
Photo-induced switching between collective quantum states of matter is a fascinating rising field with exciting opportunities for novel technologies. Presently very intensively studied examples in this regard are nanometer-thick single crystals of the layered material 1T-TaS2 , where picosecond laser pulses can trigger a fully reversible insulator-to-metal transition (IMT). This IMT is believed to be connected to the switching between metastable collective quantum states, but the microscopic nature of this so-called hidden quantum state remained largely elusive up to now. Here we determine the latter by means of state-of-the-art x-ray diffraction and show that the laser-driven IMT involves a marked rearrangement of the charge and orbital order in the direction perpendicular to the TaS2-layers. More specifically, we identify the collapse of inter-layer molecular orbital dimers, which are a characteristic feature of the insulating phase, as a key mechanism for the non-thermal IMT in 1T-TaS2, which indeed involves a collective transition between two truly long-range ordered electronic crystals.
The Coulomb interaction is widely known to enhance the effective mass of interacting particles and therefore tends to favor a localized state at commensurate filling. Here, we will show that, in contrast to this consensus, in a van der Waals heterostructure consisting of graphene and hexagon boron nitride (h-BN), the onsite Coulomb repulsion will at first destroy the localized state. This is due to the fact that the onsite Coulomb repulsion tends to suppress the asymmetry between neighboring carbons induced by h-BN substrate. We corroborate this surprising phenomenon by solving a tight-binding model with onsite Coulomb repulsion treated within coherent potential approximation, where hopping parameters are derived from density functional theory calculations based on the graphene/h-BN heterostructure. Our results indicate that both gapless and gapped states observed experimentally in graphene/h-BN heterostructures can be understood after a realistic value of the onsite Coulomb repulsion as well as different interlayer distances are taken into account. Finally, we propose ways to enhance the gapped state which is essential for potential application of graphene to next-generation electronics. Furthermore, we argue that band gap suppressed by many-body effect should happen in other van der Waals heterostructures.
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