No Arabic abstract
The dynamics of desorption from a submonolayer of adsorbed atoms or ions are significantly influenced by the absence or presence of lateral diffusion of the adsorbed particles. When diffusion is present, the adsorbate configuration is simultaneously changed by two distinct processes, proceeding in parallel: adsorption/desorption, which changes the total adsorbate coverage, and lateral diffusion, which is coverage conserving. Inspired by experimental results, we here study the effects of these competing processes by kinetic Monte Carlo simulations of a simple lattice-gas model. In order to untangle the various effects, we perform large-scale simulations, in which we monitor coverage, correlation length, and cluster-size distributions, as well as the behavior of representative individual clusters, during desorption. For each initial adsorbate configuration, we perform multiple, independent simulations, without and with diffusion, respectively. We find that, compared to desorption without diffusion, the coverage-conserving diffusion process produces two competing effects: a retardation of the desorption rate, which is associated with a coarsening of the adsorbate configuration, and an acceleration due to desorption of monomers evaporated from the cluster perimeters. The balance between these two effects is governed by the structure of the adsorbate layer at the beginning of the desorption process. Deceleration and coarsening are predominant for configurations dominated by monomers and small clusters, while acceleration is predominant for configurations dominated by large clusters.
Many atomic liquids can form transient covalent bonds reminiscent of those in the corresponding solid states. These directional interactions dictate many important properties of the liquid state, necessitating a quantitative, atomic-scale understanding of bonding in these complex systems. A prototypical example is liquid silicon, wherein transient covalent bonds give rise to local tetrahedral order and consequent non-trivial effects on liquid state thermodynamics and dynamics. To further understand covalent bonding in liquid silicon, and similar liquids, we present an ab initio simulation-based approach for quantifying the structure and dynamics of covalent bonds in condensed phases. Through the examination of structural correlations among silicon nuclei and maximally localized Wannier function centers, we develop a geometric criterion for covalent bonds in liquid Si. We use this to monitor the dynamics of transient covalent bonding in the liquid state and estimate a covalent bond lifetime. We compare covalent bond dynamics to other processes in liquid Si and similar liquids and suggest experiments to measure the covalent bond lifetime.
Traditional classifications of crystalline phases focus on nuclear degrees of freedom. Through examination of both electronic and nuclear structure, we introduce the concept of an electronic plastic crystal. Such a material is classified by crystalline nuclear structure, while localized electronic degrees of freedom - here lone pairs - exhibit orientational motion at finite temperatures. This orientational motion is an emergent phenomenon arising from the coupling between electronic structure and polarization fluctuations generated by collective motions, such as phonons. Using ab initio molecular dynamics simulations, we predict the existence of electronic plastic crystal motion in halogen crystals and halide perovskites, and suggest that such motion may be found in a broad range of solids with lone pair electrons. Such fluctuations in the charge density should be observable, in principle via synchrotron scattering.
Halogen bonding has emerged as an important noncovalent interaction in a myriad of applications, including drug design, supramolecular assembly, and catalysis. Current understanding of the halogen bond is informed by electronic structure calculations on isolated molecules and/or crystal structures that are not readily transferable to liquids and disordered phases. To address this issue, we present a first-principles simulation-based approach for quantifying halogen bonds in molecular systems rooted in an understanding of nuclei-nuclei and electron-nuclei spatial correlations. We then demonstrate how this approach can be used to quantify the structure and dynamics of halogen bonds in condensed phases, using solid and liquid molecular chlorine as prototypical examples with high concentrations of halogen bonds. We close with a discussion of how the knowledge generated by our first-principles approach may inform the development of classical empirical models, with a consistent representation of halogen bonding.
We investigate the influence of a stochastically fluctuating step-barrier potential on bimolecular reaction rates by exact analytical theory and stochastic simulations. We demonstrate that the system exhibits a new resonant reaction behavior with rate enhancement if an appropriately defined fluctuation decay length is of the order of the system size. Importantly, we find that in the proximity of resonance the standard reciprocal additivity law for diffusion and surface reaction rates is violated due to the dynamical coupling of multiple kinetic processes. Together, these findings may have important repercussions on the correct interpretation of various kinetic reaction problems in complex systems, as, e.g., in biomolecular association or catalysis.
By generalizing the traditional concept of heat dQ and work dW to also include their time-dependent irreversible components d_{i}Q and d_{i}W allows us to express them in terms of the instantaneous internal temperature T(t) and pressure P(t), whereas the conventional form uses the constant values T_{0} and P_{0} of the medium. This results in an extremely useful formulation of non-equilibrium thermodynamics so that the first law turns into the Gibbs fundamental relation and the Clausius inequality becomes an equality ointdQ(t)/T(t)equiv0 in all cases, a quite remarkable but unexpected result. We determine the irreversible components d_{i}Qequivd_{i}W and discuss how they can be determined to obtain the generalized dW(t) and dQ(t).