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Register a new userTuning exciton and biexciton transition energies and fine structure splitting through hydrostatic pressure in single InGaAs quantum dots
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We demonstrate that the exciton and biexciton emission energies as well as exciton fine structure splitting (FSS) in single (In,Ga)As/GaAs quantum dots (QDs) can be efficiently tuned using hydrostatic pressure in situ in an optical cryostat at up to 4.4 GPa. The maximum exciton emission energy shift was up to 380 meV, and the FSS was up to 180 $mu$eV. We successfully produced a biexciton antibinding-binding transition in QDs, which is the key experimental condition that generates color- and polarization-indistinguishable photon pairs from the cascade of biexciton emissions and that generates entangled photons via a time-reordering scheme. We perform atomistic pseudopotential calculations on realistic (In,Ga)As/GaAs QDs to understand the physical mechanism underlying the hydrostatic pressure-induced effects.
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We report on single InGaAs quantum dots embedded in a lateral electric field device. By applying a voltage we tune the neutral exciton transition into resonance with the biexciton using the quantum confined Stark effect. The results are compared to theoretical calculations of the relative energies of exciton and biexciton. Cascaded decay from the manifold of single exciton-biexciton states has been predicted to be a new concept to generate entangled photon pairs on demand without the need to suppress the fine structures splitting of the neutral exciton.
In a charge tunable device, we investigate the fine structure splitting of neutral excitons in single long-wavelength (1.1mu m < lambda < 1.3 mu m) InGaAs quantum dots as a function of external uniaxial strain. Nominal fine structure splittings between 16 and 136 mu eV are measured and manipulated. We observe varied response of the splitting to the external strain, including positive and negative tuning slopes, different tuning ranges, and linear and parabolic dependencies, indicating that these physical parameters depend strongly on the unique microscopic structure of the individual quantum dot. To better understand the experimental results, we apply a phenomenological model describing the exciton polarization and fine-structure splitting under uniaxial strain. The model predicts that, with an increased experimental strain tuning range, the fine-structure can be effectively canceled for select telecom wavelength dots using uniaxial strain. These results are promising for the generation of on-demand entangled photon pairs at telecom wavelengths.
We present a detailed investigation into the optical characteristics of individual InAs quantum dots (QDs) grown by metalorganic chemical vapor deposition, with low temperature emission in the telecoms window around 1300 nm. Using micro-photoluminescence (PL) spectroscopy we have identified neutral, positively charged, and negatively charged exciton and biexciton states. Temperature-dependent measurements reveal dot-charging effects due to differences in carrier diffusivity. We observe a pronounced linearly polarized splitting of the neutral exciton and biexciton lines (~250 ueV) resulting from asymmetry in the QD structure. This asymmetry also causes a mixing of the excited trion states which is manifested in the fine structure and polarization of the charged biexciton emission; from this data we obtain values for the ratio between the anisotropic and isotropic electron-hole exchange energies of (Delta1)/(Delta0)= 0.2--0.5. Magneto-PL spectroscopy has been used to investigate the diamagnetic response and Zeeman splitting of the various exciton complexes. We find a significant variation in g-factor between the exciton, the positive biexciton, and the negative biexciton; this is also attributed to anisotropy effects and the difference in lateral extent of the electron and hole wavefunctions.
We use a path integral quantum Monte Carlo method to simulate excitons and biexcitons in core shell nanocrystals with Type-I, II and quasi-Type II band alignments. Quantum Monte Carlo techniques allow for all quantum correlations to be included when determining the thermal ground state, thus producing accurate predictions of biexciton binding. These subtle quantum correlations are found to cause the biexciton to be binding with Type-I carrier localization and strongly anti-binding with Type-II carrier localization, in agreement with experiment for both core shell nanocrystals and dot in rod nanocrystal structures. Simple treatments based on perturbative approaches are shown to miss this important transition in the biexciton binding. Understanding these correlations offers prospects to engineer strong biexciton anti-binding which is crucial to the design of nanocrystals for single exciton lasing applications.
InGaAs Quantum Dots embedded in GaAs barriers, grown in inverted tetrahedral recesses of 7 {mu}m edge, have showed interesting characteristics in terms of uniformity and spectral narrowness of the emission. In this paper we present a study on the fine structure splitting (FSS). The investigation of about 40 single quantum dots revealed two main points: (1) the values of this parameter are very similar from dot to dot, proving again the uniformity of Pyramidal QD properties, (2) there is a little chance, in the sample investigated, to find a dot with natural zero splitting, but the values found (the mean being 13 {mu}eV) should always guarantee the capability of restoring the degeneracy with some corrective technique (e.g. application of a small magnetic field).
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