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Register a new userCharacterization of Fe-N nano crystals and nitrogen-containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy
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Nanometric inclusions filled with nitrogen, located adjacent to FenN (n = 3 or 4) nanocrystals within (Ga,Fe)N layers, are identified and characterized using scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). High-resolution STEM images reveal a truncation of the Fe-N nanocrystals at their boundaries with the nitrogen-containing inclusion. A controlled electron beam hole drilling experiment is used to release nitrogen gas from an inclusion in situ in the electron microscope. The density of nitrogen in an individual inclusion is measured to be 1.4 +- 0.3 g/cm3. These observations provide an explanation for the location of surplus nitrogen in the (Ga,Fe)N layers, which is liberated by the nucleation of FenN (n> 1) nanocrystals during growth.
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We employ x-ray spectroscopy to characterize the distribution and magnetism of particular alloy constituents in (Ga,Fe)N films grown by metal organic vapor phase epitaxy. Furthermore, photoelectron microscopy gives direct evidence for the aggregation of Fe ions, leading to the formation of Fe-rich nanoregions adjacent to the samples surface. A sizable x-ray magnetic circular dichroism (XMCD) signal at the Fe L-edges in remanence and at moderate magnetic fields at 300 K links the high temperature ferromagnetism with the Fe(3d) states. The XMCD response at the N K-edge highlights that the N(2p) states carry considerable spin polarization. We conclude that FeN{delta} nanocrystals, with delta > 0.25, stabilize the ferromagnetic response of the films.
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