Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userThe influence of Auger recombination on the performance of quantum-dot light-emitting diodes
191
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
A growing interest in colloidal quantum dot (QD) based light-emitting diodes (QD-LEDs) has been motivated by the exceptional color purity and spectral tunability of QD emission as well as the amenability of QD materials to highly scalable and inexpensive solution processing. One current challenge in the QD-LED field has been a still incomplete understanding of the role of extrinsic factors (e.g., recombination via QD surface defects) versus intrinsic processes such as multicarrier Auger recombination or electron-hole separation due to applied electric field in defining device efficiency. Here, we address this problem with a study of excited-state dynamics in a series of structurally engineered QDs, which is performed in parallel with characterization of their performance upon incorporation into LEDs. The results of this study indicate that under both zero and forward bias, a significant fraction of the QDs within the active emitting layer is negatively charged and therefore, Auger recombination represents an important factor limiting the efficiency of these devices. We further observe that the onset of the LED efficiency roll-off is also controlled by Auger recombination and can be shifted to higher currents by using newly developed QDs with an intermediate alloy layer at the core-shell interface introduced for suppression of Auger decay. Our findings suggest that further improvement in the performance of QD-LEDs can be achieved by developing effective approaches for controlling Auger recombination and/or minimizing the effects of QD charging via improved balancing of electron and hole injection currents.
rate research
Read More
Previous single-particle spectroscopic studies of colloidal quantum dots have indicated a significant spread in biexciton lifetimes across an ensemble of nominally identical nanocrystals. It has been speculated that in addition to dot-to-dot variation in physical dimensions, this spread is contributed to by variations in the structure of the quantum dot interface, which controls the shape of the confinement potential. Here we directly evaluate the effect of the composition of the core-shell interface on single- and multi-exciton dynamics via side-by-side measurements of individual core-shell CdSe-CdS nanocrystals with a sharp vs. smooth (graded) interface. To realize the latter type of structures, we incorporate a CdSexS1-x alloy layer of controlled composition and thickness between the CdSe core and the CdS shell. We observe that while having essentially no effect on single-exciton decay, the interfacial alloy layer leads to a systematic increase in biexciton lifetimes. This observation provides direct experimental evidence that in addition to the size of the quantum dot, its interfacial properties also significantly affect the rate of Auger recombination, which governs biexciton decay. These findings help rationalize previous observations of a significant heterogeneity in the biexciton lifetimes across similarly sized quantum dots and should facilitate the development of Auger-recombination-free colloidal nanostructures for a range of applications from lasers and light-emitting diodes to photodetectors and solar cells.
Scalability and foundry compatibility (as for example in conventional silicon based integrated computer processors) in developing quantum technologies are exceptional challenges facing current research. Here we introduce a quantum photonic technology potentially enabling large scale fabrication of semiconductor-based, site-controlled, scalable arrays of electrically driven sources of polarization-entangled photons, with the potential to encode quantum information. The design of the sources is based on quantum dots grown in micron-sized pyramidal recesses along the crystallographic direction (111)B theoretically ensuring high symmetry of the quantum dots - the condition for actual bright entangled photon emission. A selective electric injection scheme in these non-planar structures allows obtaining a high density of light-emitting diodes, with some producing entangled photon pairs also violating Bells inequality. Compatibility with semiconductor fabrication technology, good reproducibility and control of the position make these devices attractive candidates for integrated photonic circuits for quantum information processing.
The kinetics of the charge carrier recombination in dye molecule-doped multilayer organic light-emitting diodes (OLEDs) was quantified by transient electroluminescence (EL). Three sets of dye molecules, such as derivatives of naphthalimide and stilbene, were used as dopants in light-emission layer. Although the devices show almost the same EL spectra for each set of molecules, they show very different EL efficiency. The difference in EL efficiency was attributed to the difference in charge carrier recombination, as revealed by transient EL. The recombination coefficient ({gamma}) was determined from the long-time component of the temporal decay of the EL intensity after a rectangular voltage pulse was turned off. It was found that {gamma} and EL efficiency were both strongly dependent on the molecular structures of the dopants, and the donor groups and {pi}-conjugated structure guaranteed high {gamma} and EL efficiency in OLEDs.
The magnetoelectroluminescence of conjugated organic polymer films is widely accepted to arise from a polaron pair mechanism, but their magnetoconductance is less well understood. Here we derive a new relationship between the experimentally measurable magnetoelectroluminescence and magnetoconductance and the theoretically calculable singlet yield of the polaron pair recombination reaction. This relationship is expected to be valid regardless of the mechanism of the magnetoconductance, provided the mobilities of the free polarons are independent of the applied magnetic field (i.e., provided one discounts the possibility of spin-dependent transport). We also discuss the semiclassical calculation of the singlet yield of the polaron pair recombination reaction for materials such as poly(2,5-dioctyloxy-paraphenylene vinylene) (DOO-PPV), the hyperfine fields in the polarons of which can be extracted from light-induced electron spin resonance measurements. The resulting theory is shown to give good agreement with experimental data for both normal (H-) and deuterated (D-) DOO-PPV over a wide range of magnetic field strengths once singlet-triplet dephasing is taken into account. Without this effect, which has not been included in any previous simulation of magnetoelectroluminescence, it is not possible to reproduce the experimental data for both isotopologues in a consistent fashion. Our results also indicate that the magnetoconductance of DOO-PPV cannot be solely due to the effect of the magnetic field on the dissociation of polaron pairs.
The accurate determination of the compositional fluctuations is pivotal in understanding their role in the reduction of efficiency in high indium content $In_{x}Ga_{1-x}N$ light-emitting diodes, the origin of which is still poorly understood. Here we have combined electron energy loss spectroscopy (EELS) imaging at sub-nanometer resolution with multiscale computational models to obtain a statistical distribution of the compositional fluctuations in $In_{x}Ga_{1-x}N$ quantum wells (QWs). Employing a multiscale computational model, we show the tendency of intrinsic compositional fluctuation in $In_{x}Ga_{1-x}N$ QWs at different Indium concentration and in the presence of strain. We have developed a systematic formalism based on the autonomous detection of compositional fluctuation in observed and simulated EELS maps. We have shown a direct comparison between the computationally predicted and experimentally observed compositional fluctuations. We have found that although a random alloy model captures the distribution of compositional fluctuations in relatively low In ($sim$ 18%) content $In_{x}Ga_{1-x}N$ QWs, there exists a striking deviation from the model in higher In content ($geq$ 24%) QWs. Our results highlight a distinct behavior in carrier localization driven by compositional fluctuations in the low and high In-content InGaN QWs, which would ultimately affect the performance of LEDs. Furthermore, our robust computational and atomic characterization method can be widely applied to study materials in which nanoscale compositional fluctuations play a significant role on the material performance.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
