Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userAccessing quantum nanoplasmonics in a hybrid quantum-dot metal nanosystem: Mollow triplet of a quantum dot near a metal nanoparticle
162
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We present a theoretical study of the resonance fluorescence spectra of an optically driven quantum dot placed near a single metal nanoparticle. The metallic reservoir coupling is calculated for an 8-nm metal nanoparticle using a time-convolutionless master equation approach where the exact photon reservoir function is included using Green function theory. By exciting the system coherently near the nanoparticle dipole mode, we show that the driven Mollow spectrum becomes highly asymmetric due to internal coupling effects with higher-order plasmons. We also highlight regimes of resonance squeezing and broadening as well as spectral reshaping through light propagation. Our master equation technique can be applied to any arbitrary material system, including lossy inhomogeneous structures, where mode expansion techniques are known to break down.
rate research
Read More
We introduce a model of quantum teleportation on a channel built on a quantum dot chain. Quantum dots are coupled through hopping and each dot can accept zero, one or two electrons. Vacuum and double occupation states have the same potential energy, while single occupation states are characterized by a lower potential energy. A single dot initially decoupled from the others is weakly coupled with an external element (Bob), where a pair of electrons has been previously localized. Because of hopping after a suitable time the two dots charge states become maximally entangled. Another chain dot (Alice) is put in an unknown superposition of vacuum and double occupation states, and the other dots are initially empty. The time evolution of the system involves an electron diffusive process. A post selection procedure represented by the detection of charge pairs in a region of the chain equidistant from Alice and Bob, allows, if successful, the reconstruction on the Bob site of the unknown state initially encoded by Alice. The peculiar feature of the model is that the introduction of a trapped magnetic field strongly improves the process efficiency.
We present studies of thermal entanglement of a three-spin system in triangular symmetry. Spin correlations are described within an effective Heisenberg Hamiltonian, derived from the Hubbard Hamiltonian, with super-exchange couplings modulated by an effective electric field. Additionally a homogenous magnetic field is applied to completely break the degeneracy of the system. We show that entanglement is generated in the subspace of doublet states with different pairwise spin correlations for the ground and excited states. At low temperatures thermal mixing between the doublets with the same spin destroys entanglement, however one can observe its restoration at higher temperatures due to the mixing of the states with an opposite spin orientation or with quadruplets (unentangled states) always destroys entanglement. Pairwise entanglement is quantified using concurrence for which analytical formulae are derived in various thermal mixing scenarios. The electric field plays a specific role -- it breaks the symmetry of the system and changes spin correlations. Rotating the electric field can create maximally entangled qubit pairs together with a separate spin (monogamy) that survives in a relatively wide temperature range providing robust pairwise entanglement generation at elevated temperatures.
We present a theoretical model for the dynamics of an electron that gets trapped by means of decoherence and quantum interference in the central quantum dot (QD) of a semiconductor nanoring (NR) made of five QDs, between 100 K and 300 K. The electrons dynamics is described by a master equation with a Hamiltonian based on the tight-binding model, taking into account electron-LO phonon interaction (ELOPI). Based on this configuration, the probability to trap an electron with no decoherence is almost 27%. In contrast, the probability to trap an electron with decoherence is 70% at 100 K, 63% at 200 K and 58% at 300 K. Our model provides a novel method of trapping an electron at room temperature.
Semiconductor quantum-dot spin qubits are a promising platform for quantum computation, because they are scalable and possess long coherence times. In order to realize this full potential, however, high-fidelity information transfer mechanisms are required for quantum error correction and efficient algorithms. Here, we present evidence of adiabatic quantum-state transfer in a chain of semiconductor quantum-dot electron spins. By adiabatically modifying exchange couplings, we transfer single- and two-spin states between distant electrons in less than 127 ns. We also show that this method can be cascaded for spin-state transfer in long spin chains. Based on simulations, we estimate that the probability to correctly transfer single-spin eigenstates and two-spin singlet states can exceed 0.95 for the experimental parameters studied here. In the future, state and process tomography will be required to verify the transfer of arbitrary single qubit states with a fidelity exceeding the classical bound. Adiabatic quantum-state transfer is robust to noise and pulse-timing errors. This method will be useful for initialization, state distribution, and readout in large spin-qubit arrays for gate-based quantum computing. It also opens up the possibility of universal adiabatic quantum computing in semiconductor quantum-dot spin qubits.
We present a theory of electronic properties of HgTe quantum dot and propose a strain sensor based on a strain-driven transition from a HgTe quantum dot with inverted bandstructure and robust topologically protected quantum edge states to a normal state without edge states in the energy gap. The presence or absence of edge states leads to large on/off ratio of conductivity across the quantum dot, tunable by adjusting the number of conduction channels in the source-drain voltage window. The electronic properties of a HgTe quantum dot as a function of size and applied strain are described using eight-band kp Luttinger and Bir-Pikus Hamiltonians, with surface states identified with chirality of Luttinger spinors and obtained through extensive numerical diagonalization of the Hamiltonian.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
