No Arabic abstract
The magnetostatic interaction between magnetic domain walls (DWs) in adjacent nanotracks has been shown to produce strong inter-DW coupling and mutual pinning. In this paper, we have used electrical measurements of adjacent spin-valve nanotracks to follow the positions of interacting DWs. We show that the magnetostatic interaction between DWs causes not only mutual pinning, as observed till now, but that a travelling DW can also induce the depinning of DWs in near-by tracks. These effects may have great implications for some proposed high density magnetic devices (e.g. racetrack memory, DW logic circuits, or DW-based MRAM).
We investigate numerically the transverse versus vortex phase diagram of head-to-head domain walls in Co/Cu/Py spin valve nano-stripes (Py: Permalloy), in which the Co layer is mostly single domain while the Py layer hosts the domain wall. The range of stability of the transverse wall is shifted towards larger thickness compared to single Py layers, due to a magnetostatic screening effect between the two layers. An approached analytical scaling law is derived, which reproduces faithfully the phase diagram.
The shape instability of magnetic domain walls under current is investigated in a ferromagnetic (Ga,Mn)(As,P) film with perpendicular anisotropy. Domain wall motion is driven by the spin transfer torque mechanism. A current density gradient is found either to stabilize domains with walls perpendicular to current lines or to produce finger-like patterns, depending on the domain wall motion direction. The instability mechanism is shown to result from the non-adiabatic contribution of the spin transfer torque mechanism.
We present experimental results on the displacement of a domain wall by injection of a dc current through the wall. The samples are 1 micron wide long stripes of a CoO/Co/Cu/NiFe classical spin valve structure. The stripes have been patterned by electron beam lithography. A neck has been defined at 1/3 of the total length of the stripe and is a pinning center for the domain walls, as shown by the steps of the giant magnetoresistance curves at intermediate levels (1/3 or 2/3) between the resistances corresponding to the parallel and antiparallel configurations. We show by electric transport measurements that, once a wall is trapped, it can be moved by injecting a dc current higher than a threshold current of the order of magnitude of 10^7 A/cm^2. We discuss the different possible origins of this effect, i.e. local magnetic field created by the current and/or spin transfer from spin polarized current.
Magnetoelectric coupling in ferromagnet/multiferroic systems is often manifested in the exchange bias effect, which may have combined contributions from multiple sources, such as domain walls, chemical defects or strain. In this study we magnetically fingerprint the coupling behavior of CoFe grown on epitaxial BiFeO3 (BFO) thin films by magnetometry and first-order-reversal-curves (FORC). The contribution to exchange bias from 71{deg}, 109{deg} and charged ferroelectric domain walls (DWs) was elucidated by the FORC distribution. CoFe samples grown on BFO with 71{deg} DWs only exhibit an enhancement of the coercivity, but little exchange bias. Samples grown on BFO with 109{deg} DWs and mosaic DWs exhibit a much larger exchange bias, with the main enhancement attributed to 109{deg} and charged DWs. Based on the Malozemoff random field model, a varying-anisotropy model is proposed to account for the exchange bias enhancement. This work sheds light on the relationship between the exchange bias effect of the CoFe/BFO heterointerface and the ferroelectric DWs, and provides a path for multiferroic device analysis and design.
Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in between them high domain wall velocities (exceeding 150 m/s) are obtained for current densities well below $10^{12} unit{A/m^2}$, suggesting that these trilayer systems are promising for applications in domain wall devices in case of well controlled pinning positions. Vertical spin currents in these structures provide a potential explanation for the increase in domain wall velocity at low current densities.