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Ferroelectric switching dynamics of topological vortex domains in a hexagonal manganite

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 Added by Myung-Geun Han
 Publication date 2013
  fields Physics
and research's language is English




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Field-induced switching of ferroelectric domains with a topological vortex configuration is studied by atomic imaging and electrical biasing in an electron microscope, revealing the role of topological defects on the topologically-guided change of domain-wall pairs in a hexagonal manganite.

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123 - Kai Du , Bin Gao , Yazhong Wang 2018
The direct domain coupling of spontaneous ferroelectric polarization and net magnetic moment can result in giant magnetoelectric (ME) coupling, which is essential to achieve mutual control and practical applications of multiferroics. Recently, the possible bulk domain coupling, the mutual control of ferroelectricity (FE) and weak ferromagnetism (WFM) have been theoretically predicted in hexagonal LuFeO3. Here, we report the first successful growth of highly-cleavable Sc-stabilized hexagonal Lu0.6Sc0.4FeO3 (h-LSFO) single crystals, as well as the first visualization of their intrinsic cloverleaf pattern of vortex FE domains and large-loop WFM domains. The vortex FE domains are on the order of 0.1-1 {mu}m in size. On the other hand, the loop WFM domains are ~100 {mu}m in size, and there exists no interlocking of FE and WFM domain walls. These strongly manifest the decoupling between FE and WFM in h-LSFO. The domain decoupling can be explained as the consequence of the structure-mediated coupling between polarization and dominant in-plane antiferromagnetic spins according to the theoretical prediction, which reveals intriguing interplays between FE, WFM, and antiferromagnetic orders in h-LSFO. Our results also indicate that the magnetic topological charge tends to be identical to the structural topological charge. This could provide new insights into the induction of direct coupling between magnetism and ferroelectricity mediated by structural distortions, which will be useful for the future applications of multiferroics.
124 - Xiaoyu Wu , Kai Du , Lu Zheng 2018
We report the nanoscale electrical imaging results in hexagonal $Lu_{0.6}Sc_{0.4}FeO_3$ single crystals using conductive atomic force microscopy (C-AFM) and scanning microwave impedance microscopy (MIM). While the dc and ac response of the ferroelectric domains can be explained by the surface band bending, the drastic enhancement of domain wall (DW) ac conductivity is clearly dominated by the dielectric loss due to DW vibration rather than mobile-carrier conduction. Our work provides a unified physical picture to describe the local conductivity of ferroelectric domains and domain walls, which will be important for future incorporation of electrical conduction, structural dynamics, and multiferroicity into high-frequency nano-devices.
86 - Fei Xue , Nan Wang , Xueyun Wang 2017
Hexagonal manganites REMnO3 (RE, rare earths) have attracted significant attention due to their potential applications as multiferroic materials and the intriguing physics associated with the topological defects. The two-dimensional (2D) and 3D domain and vortex structure evolution of REMnO3 is predicted using the phase-field method based on a thermodynamic potential constructed from first-principles calculations. In 3D spaces, vortex lines show three types of topological changes, i.e. shrinking, coalescence, and splitting, with the latter two caused by the interaction and exchange of vortex loops. Compared to the coarsening rate of the isotropic XY model, the six-fold degeneracy gives rise to negligible differences with the vortex-antivortex annihilation controlling the scaling dynamics, whereas the anisotropy of interfacial energy results in a deviation. The temporal evolution of domain and vortex structures serves as a platform to fully explore the mesoscale mechanisms for the 0-D and 1-D topological defects.
Focused ion beam (FIB) and scanning electron microscopy (SEM) are used to reversibly switch improper ferroelectric domains in the hexagonal manganite ErMnO$_3$. Surface charging is achieved by local ion (positive charging) and electron (positive and negative charging) irradiation, which allows controlled polarization switching without the need for electrical contacts. Polarization cycling reveals that the domain walls tend to return to the equilibrium configuration obtained in the as-grown state. The electric field response of sub-surface domains is studied by FIB cross-sectioning, revealing the 3D switching behavior. The results clarify how the polarization reversal in hexagonal manganites progresses at the level of domains, resolving both domain wall movements and the nucleation and growth of new domains. Our FIB-SEM based switching approach is applicable to all ferroelectrics where a sufficiently large electric field can be built up via surface charging, facilitating contact-free high-resolution studies of the domain and domain wall response to electric fields in 3D.
80 - M. Sotome 2018
Photoexcitation in solids brings about transitions of electrons/holes between different electronic bands. If the solid lacks an inversion symmetry, these electronic transitions support spontaneous photocurrent due to the topological character of the constituting electronic bands; the Berry connection. This photocurrent, termed shift current, is expected to emerge on the time-scale of primary photoexcitation process. We observed ultrafast time evolution of the shift current in a prototypical ferroelectric semiconductor by detecting emitted terahertz electromagnetic waves. By sweeping the excitation photon energy across the band gap, ultrafast electron dynamics as a source of terahertz emission abruptly changes its nature, reflecting a contribution of Berry connection upon interband optical transition. The shift excitation carries a net charge flow, and is followed by a swing-over of the electron cloud on the sub-picosecond time-scale of electron-phonon interaction. Understanding these substantive characters of the shift current will pave the way for its application to ultrafast sensors and solar cells.
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