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Register a new userCdSe-Au nanorod networks welded by gold domains - a promising structure for nano-optoelectronic components
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CdSe-Au networks were synthesized by a colloidal chemistry technique. They entail CdSe nanorods with a diameter of ~10 nm and a length of ~40 nm, which are joined together by Au domains (~5 nm). Individual networks were positioned by AC dielectrophoresis between bow-tie electrodes with a gap of ~100 nm and their conductivity as well as the photoelectrical properties were investigated. Nanorod networks, with multiple Au domains on the nanorod surface, displayed stable conductivity that was not sensitive to blue laser light illumination. Such nanostructures were transformed by thermal annealing to networks with Au domains only at the nanorod tips. In this system the overall conductivity was reduced, but a clear photocurrent signal could be detected, manifesting semiconductor behavior.
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We report the effects of variation in length on the electronic structure of CdSe nanorods derived from atomic clusters and passivated by fictitious hydrogen atoms. These nanorods are augmented by attaching gold clusters at both the ends to form a nanodumbbell. The goal is to assess the changes at nanolevel after formation of contacts with gold clusters serving as electrodes and compare the results with experimental observations [PRL, 95, 056805 (2005)]. Calculations involving nanorods of length 4.6 Angstrom to 116.6 Angstrom are performed using density functional theory implemented within plane-wave basis set. The binding energy per atom saturates for nanorod of length 116.6 Angstrom. It is interesting to note that upon attaching gold clusters, the nanorods shorter than 27 Angstrom develop metallicity by means of metal induced gap states (MIGS). Longer nanorods exhibit a nanoscale Schottky barrier emerging at the center. For these nanorods, interfacial region closest to the gold electrodes shows a finite density of states in the gap due to MIGS, which gradually decreases towards the center of the nanorod opening up a finite gap. Bader charge analysis indicates localized charge transfer from metal to semiconductor.
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