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Register a new userLow temperature investigations and surface treatments of colloidal narrowband fluorescent nanodiamonds
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We report fluorescence investigations and Raman spectroscopy on colloidal nanodiamonds (NDs) obtained via bead assisted sonic disintegration (BASD) of a polycrystalline chemical vapor deposition film. The BASD NDs contain in situ created silicon vacancy (SiV) centers. Whereas many NDs exhibit emission from SiV ensembles, we also identify NDs featuring predominant emission from a single bright SiV center. We demonstrate oxidation of the NDs in air as a tool to optimize the crystalline quality of the NDs via removing damaged regions resulting in a reduced ensemble linewidth as well as single photon emission with increased purity. We furthermore investigate the temperature dependent zero-phonon-line fine-structure of a bright single SiV center as well as the polarization properties of its emission and absorption.
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We report on the production of nanodiamonds (NDs) with 70-80 nm size via bead assisted sonic disintegration (BASD) of a polycrystalline chemical vapor deposition (CVD) film. The NDs display high crystalline quality as well as intense narrowband (7 nm) room temperature luminescence at 738 nm due to in situ incorporated silicon vacancy (SiV) centers. The fluorescence properties at room and cryogenic temperatures indicate that the NDs are, depending on preparation, applicable as single photon sources or as fluorescence labels.
Arrays of fluorescent nanoparticles are highly sought after for applications in sensing and nanophotonics. Here we present a simple and robust method of assembling fluorescent nanodiamonds into macroscopic arrays. Remarkably, the yield of this directed assembly process is greater than 90% and the assembled patterns withstand ultra-sonication for more than three hours. The assembly process is based on covalent bonding of carboxyl to amine functional carbon seeds and is applicable to any material, and to non-planar surfaces. Our results pave the way to directed assembly of sensing and nanophotonics devices.
A Gaussian Approximation Potential (GAP) was trained using density-functional theory data to enable a global geometry optimization of low-index rutile IrO2 facets through simulated annealing. Ab initio thermodynamics identifies (101) and (111) (1x1)-terminations competitive with (110) in reducing environments. Experiments on single crystals find that (101) facets dominate, and exhibit the theoretically predicted (1x1) periodicity and X-ray photoelectron spectroscopy (XPS) core level shifts. The obtained structures are analogous to the complexions discussed in the context of ceramic battery materials.
GeSn alloys are metastable semiconductors that have been proposed as building blocks for silicon-integrated short-wave and mid-wave infrared photonic and sensing platforms. Exploiting these semiconductors requires, however, the control of their epitaxy and their surface chemistry to reduce non-radiative recombination that hinders the efficiency of optoelectronic devices. Herein, we demonstrate that a combined sulfur- and iodine-based treatments yields effective passivation of Ge and Ge0.9Sn0.1 surfaces. X-ray photoemission spectroscopy and in situ spectroscopic ellipsometry measurements were used to investigate the dynamics of surface stability and track the reoxidation mechanisms. Our analysis shows that the largest reduction in oxide after HI treatment, while HF+(NH4)2S results in a lower re-oxidation rate. A combined HI+(NH4)2S treatment preserves the lowest oxide ratio <10 % up to 1 hour of air exposure, while less than half of the initial oxide coverage is reached after 4 hours. These results highlight the potential of S- and I-based treatments in stabilizing the GeSn surface chemistry thus enabling a passivation method that is compatible with materials and device processing.
We present a study of the charge state conversion of single nitrogen-vacancy (NV) defects hosted in nanodiamonds (NDs). We first show that the proportion of negatively-charged NV$^{-}$ defects, with respect to its neutral counterpart NV$^{0}$, decreases with the size of the ND. We then propose a simple model based on a layer of electron traps located at the ND surface which is in good agreement with the recorded statistics. By using thermal oxidation to remove the shell of amorphous carbon around the NDs, we demonstrate a significant increase of the proportion of NV$^{-}$ defects in 10-nm NDs. These results are invaluable for further understanding, control and use of the unique properties of negatively-charged NV defects in diamond
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